LMN200B02-7

LMN200B02 200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR Please click here to visit our online spice models database. General Description LMN200B02 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on the input voltage and can support continuous maximum current of 200 mA . It also contains a discrete N-MOSFET that can be used as control. This N-MOSFET also has a built-in pull down resistor at its gate. The component can be used as a part of a circuit or as a stand alone discrete device. 6 5 4 1 2 3 Features • • • • • • Voltage Controlled Small Signal Switch N-MOSFET with Gate Pull-Down Resistor Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Fig. 1: SOT-363 C_Q1 6 B_Q1 5 S_Q2 4 Q1 Mechanical Data • • • • • • • • Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 8 Ordering Information: See Page 8 Weight: 0.006 grams (approximate) PNP C DDTB142JU_DIE R2 B 470 R3 37K E R1 10K S Q2 NMOS G DSNM6047_DIE D 1 E_Q1 2 G_Q2 3 D_Q2 Fig. 2 Schematic and Pin Configuration Sub-Component P/N DDTB142JU_DIE DSNM6047_DIE (with Gate Pull-Down Resistor) Reference Q1 Q2 Device Type PNP Transistor N-MOSFET R1 (NOM) 10K ⎯ R2 (NOM) 470 ⎯ R3 (NOM) ⎯ 37K Figure 2 2 Maximum Ratings, Total Device Characteristic Power Dissipation (Note 3) Power Derating Factor above 125°C Output Current @TA = 25°C unless otherwise specified Symbol PD Pder Iout Value 200 1.6 200 Unit mW mW/°C mA Thermal Characteristics Characteristic @TA = 25°C unless otherwise specified Symbol TJ,TSTG RθJA Value -55 to +150 625 Unit °C °C/W Operating and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Equivalent to One Heated Junction of PNP Transistor) (Note 3) Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30658 Rev. 7 - 2 1 of 9 www.diodes.com LMN200B02 © Diodes Incorporated Maximum Ratings: Sub-Component Device: Pre-Biased PNP Transistor (Q1) Characteristic Collector-Base Voltage Collector-Emitter Voltage Supply Voltage Input Voltage Output Current Symbol VCBO VCEO VCC Vin IC @TA = 25°C unless otherwise specified Value -50 -50 -50 +5 to -6 -200 Unit V V V V mA Sub-Component Device: N-MOSFET With Gate Pull-Down Resistor (Q2) @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain Gate Voltage (RGS ≤1M Ohm) Gate-Source Voltage Drain Current (Page 1: Note 3) Continuous Source Current Continuous Pulsed (tp