LMN400E01_1

LMN400E01 400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET Please click here to visit our online spice models database. General Description LMN400E01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on input voltage and can support continuous maximum current of 400 mA. It also contains an ESD protected discrete NMOSFET that can be used as control. The component can be used as a part of a circuit or as a stand alone discrete device. 6 5 4 NEW PRODUCT 1 2 3 Features • • • • • • Voltage Controlled Small Signal Switch N-MOSFET with ESD Gate Protection Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2) Fig. 1: SOT-363 C_Q1 6 B_Q1 5 S_Q2 4 C Mechanical Data • • • • • • • • Case: SOT-363 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL- STD -202, Method 208 Marking Information: See Page 8 Ordering Information: See Page 8 Weight: 0.006 grams (approximate) Q1 PNP DDTB122LU R2 B 220 E R1 10K S DMN601TK G Q2 NMOS D 1 2 3 E_Q1 G_Q2 D_Q2 Fig 2: Schematic and Pin Configuration Sub-Component P/N DDTB122LU_DIE DMN601TK_DIE (ESD Protected) Reference Q1 Q2 Device Type PNP Transistor N-MOSFET R1(NOM) 10K ⎯ R2(NOM) 220 ⎯ Figure 2 2 Maximum Ratings, Total Device Characteristic Power Dissipation Power Derating Factor above 37.5°C Output Current @TA = 25°C unless otherwise specified Symbol (Note 3) PD Pder Iout Value 200 1.6 400 Unit mW mW/°C mA Thermal Characteristics Characteristic @TA = 25°C unless otherwise specified Symbol Tj, TSTG (Note 3) RθJA Value -55 to +150 625 Unit °C °C/W Junction Operation and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Equivalent to one heated junction of PNP transistor) Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30750 Rev. 7 - 2 1 of 8 www.diodes.com LMN400E01 © Diodes Incorporated Maximum Ratings: Sub-Component Device: Pre-Biased PNP Transistor (Q1) Characteristic Collector-Base Voltage Collector-Emitter Voltage Supply Voltage Input Voltage Output Current Symbol VCBO VCEO Vcc Vin IC @TA = 25°C unless otherwise specified Value -50 -50 -50 +5 to -6 -400 Unit V V V V mA N EW PRODUCT Sub-Component Device: ESD Protected N-Channel MOSFET (Q2) Characteristic Drain-Source Voltage Drain Gate Voltage (RGS ≤ 1M Ohm) Gate-Source Voltage @TA = 25°C unless otherwise specified Symbol VDSS VDGR VGSS ID IS Value 60 60 +/-20 +/-40 300 800 300 Unit V V V mA mA Continuous Pulsed (tp