MBR1045CT

SPICE MODELS: MBR1030CT MBR1040CT MBR1045CT MBR1050CT MBR1060CT MBR1030CT - MBR1060CT 10A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Lead Free Finish, RoHS Compliant (Note 3) K C D A 1 2 3 TO-220AB L B M Dim A B C D E G Min 14.48 10.00 2.54 5.90 2.80 12.70 2.40 0.69 3.54 4.07 1.15 0.30 2.04 Max 15.75 10.40 3.43 6.40 3.93 14.27 2.70 0.93 3.78 4.82 1.39 0.50 2.79 Mechanical Data · · · · · · · Case: TO-220AB Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Polarity: As Marked on Body Terminals: Finish – Bright Tin. Solderable per MIL-STD-202, Method 208 Marking: Type Number Weight: 2.24 grams (approx.) J E G N H J K L P HH Pin 1 Pin 2 Pin 3 M N P Case All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC = 105°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Repetitive Peak Reverse Surge Current Forward Voltage Drop @ t £ 2.0ms @ IF = 5.0A, TC = 125°C @ IF = 5.0A, TC = 25°C @ IF = 10A, TC = 25°C @ TC = 25°C @ TC = 125°C @ TA = 25°C unless otherwise specified MBR Symbol 1030CT VRRM VRWM VR VR(RMS) IO IFSM IRRM VFM IRM Cj RqJC dV/dt Tj, TSTG 30 21 MBR 1035CT 35 24.5 MBR 1040CT 40 28 MBR 1045CT 45 31.5 MBR 1050CT 50 35 MBR 1060CT 60 42 Unit V V A A A 10 125 1.0 0.57 0.70 0.84 0.1 15 150 30 1000 -65 to +150 0.70 0.80 0.95 V mA pF K/W V/ms °C Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Case (Note 1) Voltage Rate of Change (Rated VR) Operating and Storage Temperature Range Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS30027 Rev. 2 - 2 1 of 2 www.diodes.com MBR1030CT-MBR1060CT ã Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) 10 100 I(AV), AVERAGE FWD CURRENT (A) 8 MBR1030CT - MBR1045CT 10 6 4 MBR1050CT / MBR1060CT 1.0 2 0 0 50 100 150 TC, CASE TEMPERATURE (° C) Fig. 1 Forward Current Derating Curve 0.1 0 0.4 0.8 1.2 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 1000 IFSM, PEAK FORWARD SURGE CURRENT (A) 300 200 150 Cj, JUNCTION CAPACITANCE (pF) 250 100 100 50 Tj = 25° C f = 1.0MHz 0 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 100 10 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance Ordering Information Device MBR10xxCT* (Note 4) Packaging TO-220AB Shipping 50/Tube * xx = Device type, e.g. MBR1045CT Notes: 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf. DS30027 Rev. 2 - 2 2 of 2 www.diodes.com MBR1030CT-MBR1060CT