0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MBR1050

MBR1050

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MBR1050 - 10A SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated

  • 数据手册
  • 价格&库存
MBR1050 数据手册
MBR1030 - MBR1060 10A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application Plastic Material: UL Flammability Classification Rating 94V-0 TO-220AC L B C K D A Pin 1 Pin 2 Dim M Min 14.22 9.65 2.54 5.84 ¾ 12.70 0.51 3.53Æ 3.56 1.14 0.30 2.03 4.83 Max 15.88 10.67 3.43 6.86 6.35 14.73 1.14 4.09Æ 4.83 1.40 0.64 2.92 5.33 A B C D E G E J R Pin 1 + Pin 2 + Case J N G Mechanical Data · · · · · · Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 2.24 grams (approx.) Mounting Position: Any Marking: Type Number K L M N P R P All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TC = 125°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Case (Note 1) Voltage Rate of Change (Rated VR) Operating and Storage Temperature Range Notes: @IF = 10A, TC = 25°C @IF = 10A, TC = 125°C @TC = 25°C @TC = 125°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM Cj RqJc dV/dt Tj, TSTG MBR 1030 30 21 @ TA = 25°C unless otherwise specified MBR 1035 35 24.5 MBR 1040 40 28 10 150 0.84 0.57 0.1 15 400 2.5 1000 MBR 1045 45 31.5 MBR 1050 50 35 MBR 1060 60 42 Unit V V A A 0.95 0.70 0.1 25 V mA pF °C/W V/ms °C -65 to +150 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. DS23009 Rev. G-2 1 of 2 MBR1030-MBR1060 10 50 IF, INSTANTANEOUS FWD CURRENT (A) I(AV), AVERAGE FWD CURRENT (A) MBR1030 - MBR1045 8 10 MBR1050 / MBR1060 6 4 1.0 2 0 0 50 100 150 0.1 0.2 0.4 0.6 Tj = 25°C Pulse width = 300µs 2% duty cycle 0.8 1.0 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) 300 1000 250 200 150 Tj = 25°C f = 1.0MHz 100 50 0 100 Cj, CAPACITANCE (pF) 0.1 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 10 100 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance IR, INSTANTANEOUS REVERSE CURRENT (mA) 1.0 Tj = 125°C 0.1 Tj = 75°C 0.01 Tj = 25°C 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS23009 Rev. G-2 2 of 2 MBR1030-MBR1060
MBR1050 价格&库存

很抱歉,暂时无法提供与“MBR1050”相匹配的价格&库存,您可以联系我们找货

免费人工找货