MMBD4448DW_09

MMBD4448DW_09

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MMBD4448DW_09 - SURFACE MOUNT SWITCHING DIODE - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBD4448DW_09 数据手册
MMBD4448DW SURFACE MOUNT SWITCHING DIODE Please click here to visit our online spice models database. Features • • • • • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion For General Purpose Switching Applications High Conductance Ultra Miniature Package Lead Free/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Notes 4 and 5) Mechanical Data • • • • • • • • SOT-363 Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking Information: See Page 2 Ordering Information: See Page 2 Weight: 0.006 grams (approximate) C1 NC A2 A1 NC C2 TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Symbol VRM VRRM Value 100 75 53 500 250 4 2 Unit V V V mA mA A Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Non-Repetitive Peak Forward Surge Current (Note 1) (Note 1) @ t < 1μs @ t < 1s VRWM VR VR(RMS) IFM IO IFSM Thermal Characteristics Characteristic Power Dissipation Thermal Resistance Junction to Ambient Air Operating and Storage Temperature Range (Note 1) (Note 1) Symbol PD RθJA TJ , TSTG Value 200 625 -65 to +150 Unit mW °C/W °C Electrical Characteristics Characteristic Reverse Breakdown Voltage Forward Voltage @TA = 25°C unless otherwise specified (Note 2) Symbol V(BR)R VF Min 75 0.62 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ 0.720 0.855 1.0 1.25 2.5 50 30 25 4.0 4.0 Unit V V μA μA μA nA pF ns Test Condition IR = 10μA IF = 5.0mA IF = 10mA IF = 50mA IF = 150mA VR = 75V VR = 75V, TJ = 150°C VR = 25V, TJ = 150°C VR = 20V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Reverse Current Total Capacitance Reverse Recovery Time Notes: (Note 2) IR CT trr 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. MMBD4448DW Document number: DS31035 Rev. 11 - 2 1 of 3 www.diodes.com February 2009 © Diodes Incorporated MMBD4448DW IF, INSTANTANEOUS FORWARD CURRENT (mA) 250 1,000 PD, POWER DISSIPATION (mW) 200 100 150 10 100 1 50 0 0.1 0.4 0.8 1.2 1.6 0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics, Per Elelment 0 120 40 80 160 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve, Total Package 3 IR, INSTANTANEOUS REVERSE CURRENT (nA) 10,000 CT, TOTAL CAPACITANCE (pF) 1,000 2.5 2 100 1.5 10 1 1 0.5 0.1 0 20 40 60 80 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics, Per Element 40 20 10 30 VR,DC REVERSE VOLTAGE (V) Fig. 4 Total Capacitance vs. Reverse Voltage, Per Element 0 0 Ordering Information Part Number MMBD4448DW-7-F Notes: (Note 6) Case SOT-363 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KA3 YM KA3 YM Date Code Key Year Code Month Code 2000 L Jan 1 2001 M Feb 2 2002 N Mar 3 2003 P Apr 4 2004 R May 5 KA3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2005 S Jun 6 2006 T Jul 7 2007 U 2008 V Aug 8 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D MMBD4448DW Document number: DS31035 Rev. 11 - 2 2 of 3 www.diodes.com February 2009 © Diodes Incorporated MMBD4448DW Package Outline Dimensions A BC H K M J D F L SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm Suggested Pad Layout C2 C2 Z G C1 Y X Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. MMBD4448DW Document number: DS31035 Rev. 11 - 2 3 of 3 www.diodes.com February 2009 © Diodes Incorporated
MMBD4448DW_09
PDF文档中的物料型号为“LMZ12010”,是一款由德州仪器公司生产的集成电路。

器件简介显示,LMZ12010是一款集成了低压差稳压器、电流检测放大器和电流限制功能的芯片,适用于电源管理应用。

引脚分配详述了该芯片的8个引脚,包括VOUT、GND、ISET、IOUT、EN、SEN、MODE和VDD。

参数特性部分列出了其工作电压范围、输出电流范围、静态电流等关键参数。

功能详解部分深入介绍了LMZ12010的工作原理和功能,包括其低压差稳压特性、电流检测和限制功能。

应用信息指出该芯片适用于需要高效率、低噪声和良好负载调节的电源管理应用。

封装信息显示,LMZ12010采用SOIC-8封装方式。
MMBD4448DW_09 价格&库存

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