0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MMBD4448H

MMBD4448H

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MMBD4448H - SURFACE MOUNT SWITCHING DIODE - Diodes Incorporated

  • 数据手册
  • 价格&库存
MMBD4448H 数据手册
MMBD4448HW SURFACE MOUNT SWITCHING DIODE Features · · · · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-323 Dim A NEW PRODUCT Min 0.30 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.25 A B C B C Mechanical Data · · · · · Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: KA1 Weight: 0.006 grams (approx.) E D E G H J M L 0.65 Nominal TOP VIEW D G H K J K L M All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectified Output Current (Note 1) Non-Repetitive Peak Forward Surge Current @ t = 1.0ms @ t = 1.0s Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Pd RqJA Tj , TSTG MMBD4448H 100 80 57 500 250 4.0 2.0 200 625 -65 to +150 Unit V V V mA mA A mW °C/W °C Electrical Characteristics Characteristic Reverse Breakdown Voltage (Note 2) Forward Voltage (Note 2) @ TA = 25°C unless otherwise specified Symbol V(BR)R VFM Min 80 0.62 ¾ ¾ ¾ ¾ ¾ ¾ Max ¾ 0.72 0.855 1.0 1.25 100 50 30 25 3.5 4.0 Unit V V nA mA mA nA pF ns Test Condition IR = 2.5mA IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA VR = 70V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V VR = 6V, f = 1.0MHz VR = 6V, IF = 5mA Peak Reverse Current (Note 2) Junction Capacitance Reverse Recovery Time Notes: IRM Cj trr 1. Valid provided that terminals are kept at ambient temperature. 2. Short duration test pulse used to minimize self-heating effect. DS30228 Rev. A-2 1 of 2 MMBD4448HW IF, INSTANTANEOUS FORWARD CURRENT (mA) 1000 10,000 NEW PRODUCT IR, LEAKAGE CURRENT (nA) 100 1000 10 100 1.0 10 0.1 VR = 20V 0.01 0 1 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Forward Characteristics 1 0 100 200 Tj, JUNCTION TEMPERATURE (°C) Fig. 2 Leakage Current vs Junction Temperature DS30228 Rev. A-2 2 of 2 MMBD4448HW
MMBD4448H 价格&库存

很抱歉,暂时无法提供与“MMBD4448H”相匹配的价格&库存,您可以联系我们找货

免费人工找货
MMBD4448HTS-7-F
  •  国内价格
  • 1+0.234
  • 10+0.216
  • 30+0.2124
  • 100+0.2016

库存:1000

MMBD4448HTW-7-F
  •  国内价格
  • 1+0.4636
  • 10+0.3819

库存:76

MMBD4448HSDW-7-F
  •  国内价格
  • 5+0.7448
  • 50+0.59223
  • 150+0.51595

库存:300