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MMBT123S_2

MMBT123S_2

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MMBT123S_2 - 1A NPN SURFACE MOUNT TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
MMBT123S_2 数据手册
MMBT123S 1A NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 4) A C B B TOP VIEW E E D G H K J L C SOT-23 Dim A B C D E M Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° Mechanical Data • • • • • • • • Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) G H J K L M α C • B E All Dimensions in mm Maximum Ratings @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC PD RθJA TJ, TSTG Value 45 18 5 1 300 417 -55 to +150 Unit V V V A mW °C/W °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain Collector-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(SAT) Cobo fT Min 45 18 5 ⎯ ⎯ 150 ⎯ ⎯ 100 Max ⎯ ⎯ ⎯ 1 1 800 0.5 8 ⎯ Unit V V V μA μA ⎯ V pF MHz Test Condition IC = 100μA, IE = 0 IC = 1mA, IB = 0 IE = 100μA, IC = 0 VCB = 40V, IE = 0 VEB = 4V, IC = 0 IC = 100mA, VCE = 1V IC = 300mA, IB = 30mA VCB = 10V, f = 1.0MHz, IE = 0 VCB = 10V, IE = 50mA, f = 100MHz 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free. 3. Short duration pulse test used to minimize self-heating effect. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30292 Rev. 7 - 2 1 of 3 www.diodes.com MMBT123S © Diodes Incorporated 400 Note 1 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 hFE, DC CURRENT GAIN 1000 100 VCE = 1.0V 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 100 f = 1MHz 1 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 2, Typical DC Current Gain vs Collector Current 1000 COBO, OUTPUT CAPACITANCE (pF) VCE (SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV) 1 10 100 100 10 10 1 0.1 1 0.0001 0.001 0.01 0.1 1 10 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 3, Output Capacitance vs. Collector-Base Voltage IC, COLLECTOR CURRENT (A) Fig. 4, Collector Saturation Voltage vs Collector Current DS30292 Rev. 7 - 2 2 of 3 www.diodes.com MMBT123S © Diodes Incorporated Ordering Information (Note 5) Device MMBT123S-7-F Notes: Packaging SOT-23 Shipping 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K6D = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year Code Month Code 2002 N Jan 1 2003 P Feb 2 2004 R Mar 3 2005 S Apr 4 2006 T May 5 Jun 6 2007 U Jul 7 2008 V Aug 8 2009 W Sep 9 2010 X Oct O 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30292 Rev. 7 - 2 3 of 3 www.diodes.com MMBT123S © Diodes Incorporated
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