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MMBT2222AT-7

MMBT2222AT-7

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MMBT2222AT-7 - NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
MMBT2222AT-7 数据手册
MMBT2222AT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT2907AT) Ultra-Small Surface Mount Package SOT-523 Dim A C TOP VIEW BC Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0° Max 0.30 0.85 1.75 ¾ 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8° Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 ¾ A B C D G H J K L M N a Mechanical Data · · · · · · · · Case: SOT-523, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): 1P Ordering & Date Code Information, See Page 2 Weight: 0.002 grams (approx.) B G H K M E N J D L C All Dimensions in mm B E Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBT2222AT 75 40 6.0 600 150 833 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30268 Rev. 2 - 2 1 of 3 MMBT2222AT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 2) @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 75 40 6.0 ¾ ¾ 35 50 75 100 40 ¾ 0.6 ¾ ¾ — 300 0.25 ¾ 75 25 ¾ Max ¾ ¾ ¾ 10 20 ¾ ¾ ¾ ¾ ¾ 0.3 1.0 1.2 2.0 8 30 ¾ 1.25 4.0 375 200 4.0 X Unit V V V nA nA Test Condition IC = 10mA, IE = 0 IC = 10mA, IB = 0 IE = 10mA, IC = 0 VCE = 60V, VEB(OFF) = 3.0V VCE = 60V, VEB(OFF) = 3.0V IC = 100mA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = 10V 10V 10V 10V 10V DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 20V, IC = 20mA, f = 100MHz VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0kHz Cobo Cibo fT hie hre hfe hoe NF pF pF MHz kW 10-4 ¾ mS dB td tr ts tf ¾ ¾ ¾ ¾ 10 25 225 60 ns ns ns ns VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Ordering Information Device MMBT2222AT-7 Notes: (Note 3) Packaging SOT-523 Shipping 3000/Tape & Reel 2. Short duration test pulse used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 1PYM Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 1P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30268 Rev. 2 - 2 2 of 3 MMBT2222AT 250 (see Note 1) 1000 Pd, POWER DISSIPATION (mW) hFE, DC CURRENT GAIN 200 TA = 125°C 150 100 TA = -25°C TA = +25°C 100 10 50 VCE = 1.0V 0 0 100 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve 200 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Typical DC Current Gain vs Collector Current 30 VCE, COLLECTOR-EMITTER VOLTAGE (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IC = 300mA IC = 30mA IC = 1mA IC = 10mA IC = 100mA 20 Cibo CAPACITANCE (pF) 10 5.0 Cobo 1.0 0.1 1.0 10 50 REVERSE VOLTAGE (V) Fig. 3 Capacitances (Typical) IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region DS30268 Rev. 2 - 2 3 of 3 MMBT2222AT
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