SPICE MODEL: MMBT2222AT
Lead-free
MMBT2222AT
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
· · · ·
Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT2907AT) Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2)
A C TOP VIEW B G H K M E BC
SOT-523 Dim A B C D G H J
L N
Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0°
Max 0.30 0.85 1.75 ¾ 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8°
Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 ¾
Mechanical Data
· · · · · · · · ·
Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 4): 1P Ordering & Date Code Information, See Page 4 Weight: 0.002 grams (approximate)
J
D
K L M N a
C
All Dimensions in mm
B E
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
@ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value 75 40 6.0 600 150 833 -55 to +150 Unit V V V mA mW °C/W °C
Characteristic
Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead
DS30268 Rev. 8 - 2
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MMBT2222AT
ã Diodes Incorporated
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3)
@ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 75 40 6.0 ¾ ¾ 35 50 75 100 40 ¾ 0.6 ¾ ¾ — 300 0.25 ¾ 75 25 ¾ Max ¾ ¾ ¾ 10 20 ¾ ¾ ¾ ¾ ¾ 0.3 1.0 1.2 2.0 8 30 ¾ 1.25 4.0 375 200 4.0 X Unit V V V nA nA Test Condition IC = 10mA, IE = 0 IC = 10mA, IB = 0 IE = 10mA, IC = 0 VCE = 60V, VEB(OFF) = 3.0V VCE = 60V, VEB(OFF) = 3.0V IC = 100mA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = 10V 10V 10V 10V 10V
DC Current Gain
hFE
¾
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Output Admittance Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
Notes:
VCE(SAT) VBE(SAT)
V V
IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 20V, IC = 20mA, f = 100MHz VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz VCE = 10 Vdc, IC = 10 mAdc, f = 1.0kHz VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0kHz
Cobo Cibo fT hie hre hfe hoe NF
pF pF MHz kW 10-4 ¾ mS dB
td tr ts tf
¾ ¾ ¾ ¾
10 25 225 60
ns ns ns ns
VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA
3. Short duration pulse test used to minimize self-heating effect.
250
(see Note 1)
1000
Pd, POWER DISSIPATION (mW)
hFE, DC CURRENT GAIN
200
TA = 125°C
150
100 TA = -25°C TA = +25°C
100
10
50
VCE = 1.0V
0 0 40 80 120 160 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve
1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current
DS30268 Rev. 8 - 2
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MMBT2222AT
35
VCE, COLLECTOR-EMITTER VOLTAGE (V)
2.0
f = 1MHz
30 25 CAPACITANCE (pF) 20 15 10 5 0 Cibo
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
IC = 30mA IC = 1mA IC = 10mA IC = 100mA IC = 300mA
Cobo
0
2
4
6
8
10
12
14
16
18
20
0.01
0.1
1
10
100
VR, REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance Characteristics
IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region
0.5
1.0 VBE(ON), BASE EMITTER VOLTAGE (V)
IC IB = 10
VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
VCE = 5V TA = -50°C TA = 25°C
0.4 TA = 25°C 0.3 TA = 150°C 0.2
TA = 150°C
0.1 TA = -50°C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current
1000
1
10
100
IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current
fT, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 5V
100
10
1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current 1
DS30268 Rev. 8 - 2
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MMBT2222AT
Ordering Information
Device
(Note 4) Packaging SOT-523 Shipping 3000/Tape & Reel
MMBT2222AT-7-F
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
1PYM
1P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September)
Date Code Key Year Code 1998 J Month Code 1999 K 2000 L Jan 1 2001 M Feb 2 2002 N March 3 2003 P Apr 4 2004 R May 5 2005 S Jun 6 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30268 Rev. 8 - 2
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MMBT2222AT