MMBT2907AT

SPICE MODELS: MMBT2907AT Lead-free MMBT2907AT PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222AT) Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) A C SOT-523 Dim Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0° Max 0.30 0.85 1.75 ¾ 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8° Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 ¾ BC TOP VIEW B E G H K A B C D G Mechanical Data · · · · · · · · · Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 2): 2F Ordering & Date Code Information, See Page 4 Weight: 0.002 grams (approximate) @ TA = 25°C unless otherwise specified B N M H J K L M N a J D L C E All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Characteristic Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value -60 -60 -5.0 -600 150 833 -55 to +150 Unit V V V mA mW °C/W °C Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30269 Rev. 7 - 2 1 of 4 www.diodes.com MMBT2907AT ã Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBL Min -60 -60 -5.0 ¾ ¾ ¾ 75 100 100 100 50 ¾ ¾ Max ¾ ¾ ¾ -10 -50 -50 ¾ ¾ ¾ 300 ¾ -0.4 -1.6 -1.3 -2.6 8.0 30 ¾ Unit V V V nA mA nA nA Test Condition IC = -10mA, IE = 0 IC = -10mA, IB = 0 IE = -10mA, IC = 0 VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 125°C VCE = -30V, VEB(OFF) = -0.5V VCE = -30V, VEB(OFF) = -0.5V IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -10V -10V -10V -10V -10V DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Note: 3. VCE(SAT) VBE(SAT) V V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -2.0V, f = 1.0MHz, IC = 0 VCE = -20V, IC = -50mA, f = 100MHz Cobo Cibo fT ¾ — 200 pF pF MHz toff td tr toff ts tf ¾ ¾ ¾ ¾ ¾ ¾ 45 10 40 100 80 30 ns ns ns ns ns ns VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA VCC = -30V, IC = -150mA, IB1 = -15mA Short duration test pulse used to minimize self-heating effect. DS30269 Rev. 7 - 2 2 of 4 www.diodes.com MMBT2907AT 200 Note 1 35 f = 1MHz Pd, POWER DISSIPATION (mW) 30 CT, CAPACITANCE (pF) 150 25 20 Cibo 15 10 Cobo 5 100 50 0 0 40 80 120 160 200 TA, AMBIENT TEMPERATURE (ºC) Fig. 1, Power Derating Curve, Total Package 0 0 2 4 6 8 10 12 14 16 18 20 VR, REVERSE VOLTAGE (V) Fig. 2, Typical Capacitance Characteristics -0.6 VCE, COLLECTOR-EMITTER VOLTAGE (V) -1.6 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.001 IC = -1mA IC = -10mA IC = -300mA IC = -100mA -0.5 -0.4 IC = 10 IB IC = -30mA -0.3 TA = 150°C -0.2 TA = 25°C -0.1 TA = -50°C 0 -0.01 -0.1 -1 -10 -100 -1 -10 -100 -1000 IB, BASE CURRENT (mA) Fig. 3, Typical Collector Saturation Region IC, COLLECTOR CURRENT (mA) Fig. 4, Collector-Emitter Saturation Voltage vs. Collector Current 1000 VCE = -5V VBE(ON), BASE EMITTER VOLTAGE (V) -1.0 -0.9 -0.8 -0.7 -0.6 TA = 25°C -0.5 -0.4 -0.3 -0.2 TA = 150°C VCE = -5V hFE, DC CURRENT GAIN TA = 150°C TA = -50°C 100 TA = 25°C TA = -50°C 10 1 -1 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs Collector Current -0.1 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Fig. 6, Base-Emitter Voltage vs. Collector Current DS30269 Rev. 7 - 2 3 of 4 www.diodes.com MMBT2907AT 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = -5V 100 10 1 -1 -10 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs. Collector Current -100 Ordering Information Device (Note 4) Packaging SOT-523 Shipping 3000/Tape & Reel MMBT2907AT-7-F Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 2F = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2FYM Date Code Key Year Code 1998 J Month Code 1999 K Jan 1 2000 L 2001 M Feb 2 2002 N March 3 2003 P Apr 4 2004 R May 5 2005 S Jun 6 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30269 Rev. 7 - 2 4 of 4 www.diodes.com MMBT2907AT