MMBT2907A_08

MMBT2907A PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) Ideal for Low Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant (Note 2) “Green” Device (Note 3) Qualified to AEC-Q 101 Standards for High Reliability Mechanical Data • • • • • • • • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) C B Top View E Device Schematic Maximum Ratings @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC ICM Value -60 -60 -5.0 -600 -800 Unit V V V mA mA Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Peak Collector Current Thermal Characteristics Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free 3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. MMBT2907A Document number: DS30040 Rev. 12 - 2 1 of 4 www.diodes.com September 2008 © Diodes Incorporated MMBT2907A Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBL Min -60 -60 -5.0 ⎯ ⎯ ⎯ 75 100 100 100 50 ⎯ ⎯ ⎯ — 200 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ -10 -50 -50 ⎯ ⎯ ⎯ 300 ⎯ -0.4 -1.6 -1.3 -2.6 8.0 30 ⎯ 45 10 40 100 80 30 Unit V V V nA μA nA nA Test Condition IC = -10μA, IE = 0 IC = -10mA, IB = 0 IE = -10μA, IC = 0 VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 125°C VCE = -30V, VEB(OFF) = -0.5V VCE = -30V, VEB(OFF) = -0.5V IC = -100µA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -2.0V, f = 1.0MHz, IC = 0 VCE = -20V, IC = -50mA, f = 100MHz DC Current Gain hFE ⎯ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Notes: VCE(SAT) VBE(SAT) Cobo Cibo fT toff td tr toff ts tf V V pF pF MHz ns ns ns ns ns ns VCC = -30V, IC = -150mA, IB1 = -15mA VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA 4. Short duration pulse test used to minimize self-heating effect. 400 350 PD, POWER DISSIPATION (mW) 1,000 VCE = -5V 250 200 150 100 50 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1) 0 RθJA = 417°C/W hFE, DC CURRENT GAIN 300 TA = 150°C 100 TA = 25°C T A = -50°C 10 1 -1 -10 -100 -1,000 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current MMBT2907A Document number: DS30040 Rev. 12 - 2 2 of 4 www.diodes.com September 2008 © Diodes Incorporated MMBT2907A -0.6 IC IB = 1 0 VBE(ON), BASE-EMITTER SATURATION VOLTAGE (V) -1.0 VCE = -5V -0.9 -0.8 -0.7 -0.6 TA = 25°C T A = -50°C VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) -0.5 -0.4 -0.3 T A = 150°C -0.2 TA = 25°C -0.5 -0.4 -0.3 -0.2 -0.1 TA = 150°C -0.1 TA = -50°C 0 -1 -10 -1,000 -100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current -1 -10 -100 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Base-Emitter Saturation Voltage vs. Collector Current 35 f = 1MHz 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) VCE = -5V 30 25 CAPACITANCE (pF) 20 Cibo 100 15 10 Cobo 10 5 0 0 8 10 12 14 16 18 4 6 VR, REVERSE VOLTAGE (V) Fig. 5 Typical Capacitance Characteristics 2 20 -100 -10 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current 1 -1 -1.6 VCE, COLLECTOR-EMITTER VOLTAGE (V) -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.001 IC = -1mA IC = -10mA IC = -300mA IC = -100mA IC = -30mA -0.1 -1 -10 -100 IB, BASE CURRENT (mA) Fig. 7 Typical Collector Saturation Region -0.01 MMBT2907A Document number: DS30040 Rev. 12 - 2 3 of 4 www.diodes.com September 2008 © Diodes Incorporated MMBT2907A Ordering Information Part Number MMBT2907A-7-F Notes: (Note 5) Case SOT-23 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K2F = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2006 T Jun 6 2007 U Jul 7 2008 V 2009 W Aug 8 2010 X Sep 9 2011 2012 Y Z Oct O 2013 A Nov N 2014 B 2015 C Dec D K2F Date Code Key Year 1998 Code J Month Code Jan 1 1999 K 2000 L Feb 2 2001 M Mar 3 2002 N 2003 P Apr 4 2004 2005 R S May 5 Package Outline Dimensions A YM BC H K D J F G L M K1 SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 X E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. MMBT2907A Document number: DS30040 Rev. 12 - 2 4 of 4 www.diodes.com September 2008 © Diodes Incorporated