MMBT3904LP

MMBT3904LP 40V NPN SURFACE MOUNT TRANSISTOR Features • • • • • Complementary PNP Type Available (MMBT3906LP) Ultra-Small Leadless Surface Mount Package “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • • • Case: DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0008 grams (approximate) C DFN1006-3 B B C E Top View Device Schematic E Bottom View Device Symbol Ordering Information (Note 3) Product MMBT3904LP-7 MMBT3904LP-7B Notes: Marking 1N 1N Reel size (inches) 7 7 Tape width (mm) 8mm 8mm Quantity per reel 3,000 10,000 1. No purposefully added lead. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information MMBT3904LP-7 MMBT3904LP-7B 1N Top View Dot Denotes Collector Side 1N Top View Bar Denotes Base and Emitter Side 1N = Product Type Marking Code MMBT3904LP Document number: DS31835 Rev. 3 - 2 1 of 5 www.diodes.com February 2011 © Diodes Incorporated MMBT3904LP Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 4) Symbol VCBO VCEO VEBO IC Value 60 40 6.0 200 Unit V V V mA Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Operating and Storage and Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 250 500 -55 to +150 Unit mW °C/W °C 4. Device mounted on FR-4 PCB pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 500°C/W P(pk) 0.01 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse t1 t2 T J - T A = P * RθJA(t) Duty Cycle, D = t1/t2 0.001 1E-06 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 1 Transient Thermal Response 0.4 100 1,000 10,000 1,000 P(pk), PEAK TRANSIENT POWER (W) Single Pulse 100 RθJA(t) = r(t) * RθJA RθJA = 500°C/W TJ - TA = P * RθJA(t) PD, POWER DISSIPATION (W) 0.3 Note 4 10 0.2 1 0.1 0.1 1E-06 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Power Dissipation vs. Ambient Temperature 0.0001 0.01 1 100 10,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation MMBT3904LP Document number: DS31835 Rev. 3 - 2 2 of 5 www.diodes.com February 2011 © Diodes Incorporated MMBT3904LP Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) Symbol BVCBO BVCEO BVEBO ICEX IBL Min 60 40 6.0 ⎯ ⎯ 40 70 100 60 30 ⎯ 0.65 ⎯ ⎯ ⎯ 1.0 0.5 100 1.0 300 ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ 50 50 ⎯ ⎯ 300 ⎯ ⎯ 0.20 0.30 0.85 0.95 4.0 8.5 10 8.0 400 40 ⎯ 35 35 200 50 Unit V V V nA nA Test Condition IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA DC Current Gain hFE ⎯ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: 5. Short duration pulse test used to minimize self-heating effect. VCE(sat) VBE(sat) Cobo Cibo hie hre hfe hoe fT td tr ts tf V V pF pF kΩ -4 x 10 ⎯ μS MHz ns ns ns ns 0.14 IB = 2mA 400 IB = 1.6mA IB = 1.4mA IB = 1.2mA IB = 1mA IB = 1.8mA T A = 150°C VCE = 1V 0.12 IC, COLLECTOR CURRENT (A) 0.10 0.08 0.06 hFE, DC CURRENT GAIN 300 T A = 125°C TA = 85°C IB = 0.8mA IB = 0.6mA IB = 0.4mA 200 T A = 25°C 0.04 IB = 0.2mA 100 TA = -55°C 0.02 0 0 0.1 0 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current MMBT3904LP Document number: DS31835 Rev. 3 - 2 3 of 5 www.diodes.com February 2011 © Diodes Incorporated MMBT3904LP 1 IC/IB = 10 1 IC/IB = 20 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) T A = 150°C 0.1 TA = 150°C TA = 125°C TA = 85°C T A = 25°C TA = -55°C 0.1 TA = 125°C T A = 85°C T A = -55°C TA = 25°C 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.1 1.0 0.9 0.8 0.7 TA = 25°C TA = -55°C VCE = 5V 1.2 Gain = 10 1.0 0.8 TA = -55°C 0.6 0.5 0.4 0.3 0.1 TA = 85°C TA = 150°C TA = 125°C 0.6 TA = 25°C TA = 150°C 0.4 TA = 125°C T A = 85°C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.2 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current Package Outline Dimensions A A1 D b1 E b2 e DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L2 L3 L1 MMBT3904LP Document number: DS31835 Rev. 3 - 2 4 of 5 www.diodes.com February 2011 © Diodes Incorporated MMBT3904LP Suggested Pad Layout C X1 X G2 G1 Y Z Dimensions Z G1 G2 X X1 Y C Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com MMBT3904LP Document number: DS31835 Rev. 3 - 2 5 of 5 www.diodes.com February 2011 © Diodes Incorporated