MMBT3904T_2

MMBT3904T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906T) Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A C TOP VIEW B G H K M E BC SOT-523 Dim A B C D G N Min 0.15 0.75 1.45 ⎯ 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0° Max 0.30 0.85 1.75 ⎯ 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8° Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 ⎯ Mechanical Data • • • • • • • • • Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: 1N, See Page 3 Ordering & Date Code Information: See Page 3 Weight: 0.002 grams (approximate) H J J D L K L M N C B E α All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation (Note 1) @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RθJA Tj, TSTG Value 60 40 6.0 200 150 833 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30270 Rev. 8 - 2 1 of 4 www.diodes.com MMBT3904T © Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 6.0 ⎯ ⎯ 40 70 100 60 30 ⎯ 0.65 ⎯ ⎯ ⎯ 1.0 0.5 100 1.0 300 ⎯ Max ⎯ ⎯ ⎯ 50 50 ⎯ ⎯ 300 ⎯ ⎯ 0.20 0.30 0.85 0.95 4.0 8.0 10 8.0 400 40 ⎯ 5.0 Unit V V V nA nA Test Condition IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 -4 DC Current Gain hFE ⎯ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: VCE(SAT) VBE(SAT) V V Cobo Cibo hie hre hfe hoe fT NF pF pF kΩ x 10 ⎯ μS MHz dB VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0Vdc, IC = 100μAdc, RS = 1.0KΩ, f = 1.0MHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA IB1 = IB2 = 1.0mA td tr ts tf ⎯ ⎯ ⎯ ⎯ 35 35 200 50 ns ns ns ns 5. Short duration pulse test used to minimize self-heating effect. 250 15 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) 0 100 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve 200 Pd, POWER DISSIPATION (mW) 200 10 150 100 5 50 0 0 0.1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage DS30270 Rev. 8 - 2 2 of 4 www.diodes.com MMBT3904T © Diodes Incorporated 1,000 1 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE VCE = 1.0V T A = 125°C hFE, DC CURRENT GAIN 100 T A = -25°C TA = +25°C 0.1 10 1 0.1 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs. Collector Current 0.01 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1 0.1 0.1 10 1,000 100 1 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current Ordering Information (Note 6) Device MMBT3904T-7-F Notes: Packaging SOT-523 Shipping 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 1N = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 1NYM Date Code Key Year Code Month Code DS30270 Rev. 8 - 2 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P May 5 2004 R Jun 6 3 of 4 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D MMBT3904T © Diodes Incorporated www.diodes.com IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30270 Rev. 8 - 2 4 of 4 www.diodes.com MMBT3904T © Diodes Incorporated