MMBT3904_1

SPICE MODEL: MMBT3904 Lead-free MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability B TOP VIEW E E D G H B C C SOT-23 A Dim A B C D E G K J L M Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° Mechanical Data · · · · · · · · · Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking (See Page 2): K1N Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) H J K L M a C B E All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBT3904 60 40 6.0 200 300 417 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30036 Rev. 16 - 2 1 of 4 www.diodes.com MMBT3904 ã Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 6.0 ¾ ¾ 40 70 100 60 30 ¾ 0.65 ¾ ¾ ¾ 1.0 0.5 100 1.0 300 ¾ Max ¾ ¾ ¾ 50 50 ¾ ¾ 300 ¾ ¾ 0.20 0.30 0.85 0.95 4.0 8.0 10 8.0 400 40 ¾ 5.0 Unit V V V nA nA Test Condition IC = 10mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 Cobo Cibo hie hre hfe hoe fT NF pF pF kW x 10-4 ¾ mS MHz dB VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100mA, RS = 1.0kW, f = 1.0kHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA td tr ts tf (Note 4) ¾ ¾ ¾ ¾ 35 35 200 50 ns ns ns ns Ordering Information Device MMBT3904-7-F Notes: Packaging SOT-23 Shipping 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K1N Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 K1N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2001 M Apr 4 YM 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30036 Rev. 16 - 2 2 of 4 www.diodes.com MMBT3904 15 f = 1MHz 300 250 200 150 100 50 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) 350 PD, POWER DISSIPATION (mW) 10 5 Cibo Cobo 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 0 0.1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage 1000 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 1 IC IB = 10 hFE, DC CURRENT GAIN TA = 125°C 100 TA = -25°C TA = +25°C 0.1 10 VCE = 1.0V 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 10 IC IB = 10 0.01 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1 TA = -25°C TA = 125°C TA = 25°C TA = 75°C 0.1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30036 Rev. 16 - 2 3 of 4 www.diodes.com MMBT3904 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS30036 Rev. 16 - 2 4 of 4 www.diodes.com MMBT3904