MMBT3906LP

MMBT3906LP 40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Complementary NPN Type Available (MMBT3904LP) Ultra-Small Leadless Surface Mount Package “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD rating: 200V-MM, 4KV-HBM Mechanical Data • • • • • Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) ADVANCE INFORMATION C DFN1006-3 B B C E E Bottom View Device Symbol Top View Device Schematic Ordering Information Product MMBT3906LP-7 MMBT3906LP-7B Notes: Marking 3N 3N Reel size (inches) 7 7 Tape width (mm) 8mm 8mm Quantity per reel 3,000 10,000 1. No purposefully added lead. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information MMBT3906LP-7 MMBT3906LP-7B 3N Top View Dot Denotes Collector Side 3N Top View Bar Denotes Base and Emitter Side 3N = Product Type Marking Code MMBT3906LP Document number: DS31836 Rev. 3 - 2 1 of 5 www.diodes.com February 2011 © Diodes Incorporated MMBT3906LP Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 4) Symbol VCBO VCEO VEBO IC Value -40 -40 -5.0 -200 Unit V V V mA ADVANCE INFORMATION Thermal Characteristics Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Operating and Storage and Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 250 500 -55 to +150 Unit mW °C/W °C 4. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 RθJA(t) = r(t) * RθJA RθJA = 500°C/W P(pk) D = 0.05 0.01 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 0.001 1E-06 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 1 Transient Thermal Response 0.30 100 1,000 10,000 1,000 P(pk), PEAK TRANSIENT POWER (W) Single Pulse 100 T J - T A = P * RθJA(t) PD, POWER DISSIPATION (W) RθJA(t) = r(t) * RθJA RθJA = 500°C/W 0.25 0.20 10 0.15 0.10 1 0.05 0.1 1E-06 0.0001 0.01 1 100 10,000 t1, PULSE DURATION TIME (s) Fig. 2 Single Pulse Maximum Power Dissipation 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Power Dissipation vs. Ambient Temperature MMBT3906LP Document number: DS31836 Rev. 3 - 2 2 of 5 www.diodes.com February 2011 © Diodes Incorporated MMBT3906LP Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) Symbol BVCBO BVCEO BVEBO ICEX ICBO IBL Min -40 -40 -5.0 ⎯ ⎯ ⎯ 60 80 100 60 30 ⎯ -0.65 ⎯ ⎯ ⎯ 2.0 0.1 100 3.0 300 ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ -50 -50 -50 ⎯ ⎯ 300 ⎯ ⎯ -0.25 -0.40 -0.85 -0.95 4.5 10 12 10 400 60 ⎯ 35 35 225 75 Unit V V V nA nA nA Test Condition IC = -10μA, IE = 0 IC = -1.0mA, IB = 0 IE = -10μA, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCB = -30V, IE = 0 VCE = -30V, VEB(OFF) = -3.0V IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA ADVANCE INFORMATION DC Current Gain hFE ⎯ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: 5. Short duration pulse test used to minimize self-heating effect. VCE(sat) VBE(sat) Cobo Cibo hie hre hfe hoe fT td tr ts tf V V pF pF kΩ -4 x 10 ⎯ μS MHz ns ns ns ns 0.20 IB = -2mA IB = -1.6mA IB = -1.8mA 400 350 TA = 150°C VCE = 1V -IC, COLLECTOR CURRENT (A) 0.16 IB = -1.4mA IB = -1.2mA hFE, DC CURRENT GAIN 300 TA = 125°C 0.12 IB = -1mA IB = -0.8mA 250 200 TA = 85°C 0.08 IB = -0.6mA IB = -0.4mA T A = 25°C 150 100 50 0 0.1 0.04 IB = -0.2mA TA = -55°C 0 0 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current MMBT3906LP Document number: DS31836 Rev. 3 - 2 3 of 5 www.diodes.com February 2011 © Diodes Incorporated MMBT3906LP 1 IC/IB = 10 1 IC/IB = 20 ADVANCE INFORMATION -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.1 T A = 150°C T A = 125°C TA = 85°C T A = 25°C TA = -55°C 0.1 T A = 150°C T A = 125°C TA = 85°C T A = 25°C TA = -55°C 0.01 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0.01 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.2 Gain = 10 1.2 Gain = 10 1.0 1.0 0.8 TA = -55°C 0.8 TA = -55°C 0.6 T A = 25°C TA = 150°C 0.6 T A = 25°C TA = 150°C 0.4 TA = 85°C TA = 125°C 0.4 TA = 125°C TA = 85°C 0.2 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Saturation Voltage vs. Collector Current 0.2 0.1 1 10 100 1,000 -IC, COLLECTOR CURRENT (mA) Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current Package Outline Dimensions A A1 D b1 E b2 e DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 ⎯ ⎯ L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 ⎯ ⎯ All Dimensions in mm L2 L3 L1 MMBT3906LP Document number: DS31836 Rev. 3 - 2 4 of 5 www.diodes.com February 2011 © Diodes Incorporated MMBT3906LP Suggested Pad Layout C X1 X G2 ADVANCE INFORMATION Dimensions Z G1 G2 X X1 Y C Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7 G1 Y Z IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com MMBT3906LP Document number: DS31836 Rev. 3 - 2 5 of 5 www.diodes.com February 2011 © Diodes Incorporated