MMBT3906T

SPICE MODEL: MMBT3906T MMBT3906T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904T) Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) A C SOT-523 Dim A BC E G H K M Min 0.15 0.75 1.45 ¾ 0.90 1.50 0.00 0.60 0.10 0.10 0.45 0° Max 0.30 0.85 1.75 ¾ 1.10 1.70 0.10 0.80 0.30 0.20 0.65 8° Typ 0.22 0.80 1.60 0.50 1.00 1.60 0.05 0.75 0.22 0.12 0.50 ¾ Mechanical Data · · · · · · · · · Case: SOT-523 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 2): 3N Ordering & Date Code Information: See Page 2 Weight: 0.002 grams (approximate) J B C D G H J K L M N a TOP VIEW B N D L C All Dimensions in mm B E Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value -40 -40 -5.0 -200 150 833 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30271 Rev. 6 - 2 1 of 4 www.diodes.com MMBT3906T ã Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 ¾ ¾ 60 80 100 60 30 ¾ -0.65 ¾ ¾ Max ¾ ¾ ¾ -50 -50 ¾ ¾ 300 ¾ ¾ -0.25 -0.40 -0.85 -0.95 4.0 Unit V V V nA nA Test Condition IC = -10mA, IE = 0 IC = -1.0mA, IB = 0 IE = -10mA, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCE = -30V, VEB(OFF) = -3.0V IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -50mA, VCE = IC = -100mA, VCE = -1.0V -1.0V -1.0V -1.0V -1.0V DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Noise Figure SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) NF V V dB IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCE = -5.0Vdc, IC = 100mAdc, RS = 1.0KW, f = 1.0KHz VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 Cobo Cibo hie hre hfe hoe fT ¾ ¾ 2.0 0.1 100 3.0 250 4.5 10 12 10 400 60 ¾ pF pF kW x 10-4 ¾ mS MHz VCE = 1.0V, IC = 10mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz td tr ts tf (Note 4) ¾ ¾ ¾ ¾ 35 35 225 75 ns ns ns ns VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA Ordering Information Device Packaging SOT-523 Shipping 3000/Tape & Reel MMBT3906T-7-F Note: 3. Short duration pulse test used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 3NYM Date Code Key Year Code Month Code Jan 1 2002 N Feb 2 2003 P March 3 Apr 4 2004 R May 5 3N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2005 S Jun 6 2006 T Jul 7 Aug 8 2007 U Sep 9 2008 V Oct O Nov N 2009 W Dec D DS30271 Rev. 6 - 2 2 of 4 www.diodes.com MMBT3906T 250 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) (see Note 1) 100 f = 1MHz Pd, POWER DISSIPATION (mW) 200 150 10 100 Cibo 50 Cobo 0 0 100 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve 1000 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 200 1 0.1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage 10 IC IB = 10 hFE, DC CURRENT GAIN TA = 125°C 1 100 TA = -25°C TA = +25°C 10 0.1 VCE = 1.0V 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 10 IC IB = 10 0.01 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1 TA = -25°C TA = 125°C TA = 25°C TA = 75°C 0.1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current DS30271 Rev. 6 - 2 3 of 4 www.diodes.com MMBT3906T IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS30271 Rev. 6 - 2 4 of 4 www.diodes.com MMBT3906T