MMBT4403-7

SPICE MODEL: MMBT4403 MMBT4403 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4401) Ideal for Medium Power Amplification and Switching Available in Lead Free/RoHS Compliant Version (Note 2) B B TOP VIEW E C C A SOT-23 Dim A B C D E K J L Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° Mechanical Data · · · · · · · · · Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Please see Ordering Information, Note 5, on Page 2 Terminal Connections: See Diagram Marking (See Page 2): K2T Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) E D G H G M H J K L M a C B E All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value -40 -40 -5.0 -600 300 417 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30058 Rev. 7 - 2 1 of 4 www.diodes.com MMBT4403 ã Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 ¾ ¾ 30 60 100 100 20 ¾ -0.75 ¾ ¾ ¾ 1.5 0.1 60 1.0 200 Max ¾ ¾ ¾ -100 -100 ¾ ¾ ¾ 300 ¾ -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 ¾ Unit V V V nA nA Test Condition IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -100mA, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 Ccb Ceb hie hre hfe hoe fT pF pF kW x 10-4 ¾ mS MHz VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz td tr ts tf ¾ ¾ ¾ ¾ 15 20 225 30 ns ns ns ns VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA Ordering Information Device MMBT4403-7 Note: (Note 4) Packaging SOT-23 Shipping 3000/Tape & Reel 3. Short duration pulse test used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT4403-7-F. Marking Information K2T Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 K2T = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2002 N May 5 YM 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30058 Rev. 7 - 2 2 of 4 www.diodes.com MMBT4403 30 20 Cibo CAPACITANCE (pF) 10 5.0 Cobo 1.0 -0.1 -1.0 -10 -30 REVERSE VOLTS (V) Fig. 1 Typical Capacitance VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC = 10mA IC = 1mA IC = 100mA I = 300mA C IC = 30mA 0.01 0.1 1 10 100 IB,BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region 0.5 VBE(ON), BASE EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC IB = 10 0.4 TA = 25°C 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 TA = 150°C TA = -50°C TA = 25°C VCE = 5V 0.3 0.2 TA = 150°C 0.1 TA = 50°C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3 Collector Emitter Saturation Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 4 Base-Emitter Voltage vs. Collector Current DS30058 Rev. 7 - 2 3 of 4 www.diodes.com MMBT4403 1000 VCE = 5V TA = 150°C TA = 25°C 100 TA = -50°C 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V hFE, DC CURRENT GAIN 100 10 10 1 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 DC Current Gain vs. Collector Current 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Gain Bandwidth Product vs. Collector Current 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 7, Max Power Dissipation vs Ambient Temperature DS30058 Rev. 7 - 2 4 of 4 www.diodes.com MMBT4403