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MMBT4403_2

MMBT4403_2

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MMBT4403_2 - PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
MMBT4403_2 数据手册
MMBT4403 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4401) Ideal for Medium Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 3) E A C B B TOP VIEW E D G H K J L C Mechanical Data • • • • • • • • • Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe) Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) M C Dim A B C D E G H J K L M B E SOT-23 Min Max 0.37 0.51 1.20 1.40 2.30 2.50 0.89 1.03 0.45 0.60 1.78 2.05 2.80 3.00 0.013 0.10 0.903 1.10 0.45 0.61 0.085 0.180 0° 8° α All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC PD RθJA TJ, TSTG Value -40 -40 -5.0 -600 300 417 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free. 3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30058 Rev. 9 - 2 1 of 4 www.diodes.com MMBT4403 © Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 ⎯ ⎯ 30 60 100 100 20 ⎯ -0.75 ⎯ ⎯ ⎯ 1.5 0.1 60 1.0 200 ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ -100 -100 ⎯ ⎯ ⎯ 300 ⎯ -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 ⎯ Unit V V V nA nA Test Condition IC = -100μA, IE = 0 IC = -1.0mA, IB = 0 IE = -100μA, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -150mA, VCE = -2.0V IC = -500mA, VCE = -2.0V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 -4 DC Current Gain hFE ⎯ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: 4. Short duration pulse test used to minimize self-heating effect. VCE(SAT) VBE(SAT) V V Cobo Cibo hie hre hfe hoe fT pF pF kΩ x 10 ⎯ μS MHz VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA td tr ts tf 15 20 225 30 ns ns ns ns 1,000 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Maximum Power Dissipation vs. Ambient Temperature 50 200 VCE = 5V Note 1 TA = 150°C hFE, DC CURRENT GAIN TA = 25°C 100 T A = -50°C 10 1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current DS30058 Rev. 9 - 2 2 of 4 www.diodes.com MMBT4403 © Diodes Incorporated 1.6 f = 1MHz VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC = 1mA IC = 10mA IC = 100mA I = 300mA C IC = 30mA CAPACITANCE (pF) Cibo Cobo VR, REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance 1 0.01 0.1 10 IB,BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 100 0.5 VBE(ON), BASE-EMITTER VOLTAGE (V) IC IB = 10 1.0 VCE = 5V 0.9 0.8 0.7 0.6 TA = 25°C TA = -50°C VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.4 0.3 T A = 50°C 0.2 T A = 150°C 0.5 0.4 0.3 0.2 0.1 TA = 150°C 0.1 TA = 25°C 0 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current VCE = 5V 10 1 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Voltage vs. Collector Current 100 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current 1 DS30058 Rev. 9 - 2 3 of 4 www.diodes.com MMBT4403 © Diodes Incorporated Ordering Information Device MMBT4403-7-F Notes: 5. (Note 5) Packaging SOT-23 Shipping 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K2T = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K2T Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P May 5 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. YM DS30058 Rev. 9 - 2 4 of 4 www.diodes.com MMBT4403 © Diodes Incorporated
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