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MMBT6427

MMBT6427

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MMBT6427 - NPN SURFACE MOUNT DARLINGTON TRANSISTOR - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBT6427 数据手册
MMBT6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features · · · · · · · · · · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain B SOT-23 A C B TOP VIEW E Dim A C Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° B C D E G Mechanical Data Case: SOT-23, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K1D Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) E D G H K J L M H J K L M a C B E All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBT6427 40 40 12 500 300 417 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage Base- Emitter On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Note: @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO Min 40 40 12 ¾ ¾ ¾ 10,000 20,000 14,000 ¾ ¾ ¾ Max ¾ ¾ ¾ 50 1.0 50 100,000 200,000 140,000 1.2 1.5 2.0 1.75 Unit V V V nA mA nA Test Condition IC = 100mA, IE = 0 IC = 100mA, IB = 0 IE = 10mA, IC = 0 VCB = 30V, IE = 0 VCE = 25V, IB = 0 VEB = 10V, IC = 0 IC = 10mA, VCE = 5.0V IC = 100mA, VCE = 5.0V IC = 500mA, VCE = 5.0V IC = 50mA, IB = 0.5mA IC = 500mA, IB = 0.5mA IC = 500mA, IB = 0.5mA IC = 50mA, VCE =5.0V VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 hFE VCE(SAT) VBE(SAT) VBE(ON) Cobo Cibo ¾ V V V pF pF 8.0 Typical 15 Typical 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. DS30048 Rev. 3 - 2 1 of 2 www.diodes.com MMBT6427 Ordering Information (Note 3) Device MMBT6427-7 Notes: Packaging SOT-23 Shipping 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K1D Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 2002 N May 5 K1D = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30048 Rev. 3 - 2 2 of 2 www.diodes.com MMBT6427
MMBT6427
物料型号: - 型号:MMBT6427

器件简介: - MMBT6427是一款NPN型表面贴装达林顿晶体管,采用外延平面芯片结构,适用于中等功率放大和开关应用,具有高电流增益。

引脚分配: - 引脚连接图示见文档中的图表,具体引脚尺寸和位置如下: - A: 0.37-0.51 mm - B: 1.20-1.40 mm - C: 2.30-2.50 mm - D: 0.89-1.03 mm - E: 0.45-0.60 mm - G: 1.78-2.05 mm - H: 2.80-3.00 mm - J: 0.013-0.10 mm - K: 0.903-1.10 mm - L: 0.45-0.61 mm - M: 0.085-0.180 mm - a: 0°-8°

参数特性: - 封装:SOT-23,模塑塑料 - 阻燃等级:UL94V-0 - 湿度敏感性:J-STD-020A标准下的1级 - 引脚可焊性:符合MIL-STD-202方法208 - 最大额定值(@Ta=25°C): - 集电极-基极电压:40V - 集电极-发射极电压:40V - 发射极-基极电压:12V - 集电极电流(连续):500mA - 功率耗散:300mW - 热阻(结到环境):417°C/W - 工作和存储温度范围:-55到+150°C

功能详解: - 电气特性(@Ta=25°C): - 关断特性: - 集电极-基极击穿电压:40V - 集电极-发射极击穿电压:40V - 发射极-基极击穿电压:12V - 集电极截止电流:50nA - 发射极截止电流:50nA - 开启特性: - DC电流增益:hFE在10mA时为10,000至100,000,200mA时为20,000至200,000,500mA时为14,000至140,000 - 集电极-发射极饱和电压:VCE(SAT)在50mA时未给出,在500mA时未给出 - 基极-发射极饱和电压:VBE(SAT)为2.0V - 基极-发射极开启电压:VBE(ON)为1.75V - 小信号特性: - 输出电容:Cobo典型值为8.0pF - 输入电容:Cibo典型值为15pF

应用信息: - 该晶体管适用于中等功率放大和开关应用。

封装信息: - 封装类型:SOT-23 - 封装材料:模塑塑料 - 封装尺寸:符合SO1-23标准
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