SPICE MODEL: MMBT6427
Pb
Lead-free
MMBT6427
NPN SURFACE MOUNT DARLINGTON TRANSISTOR
Features
· · · ·
Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Current Gain Lead Free/RoHS Compliant (Note 1)
C B B
TOP VIEW E
A
SOT-23 Dim
C
Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0°
Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8°
A B C D E
Mechanical Data
· · · · · · · · ·
Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 3): K1D Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approximate)
B E
J E D G H
K L
M
G H J K L M a
C
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous
@ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Value 40 40 12 500 Unit V V V mA
Characteristic
Thermal Characteristics
Characteristic Power Dissipation (Note 2) @ TA = 25°C Thermal Resistance, Junction to Ambient (Note 2)@ TA = 25°C Operating and Storage Temperature Range
Note:
Symbol Pd RqJA Tj, TSTG
Value 300 417 -55 to +150
Unit mW °C/W °C
1. No purposefully added lead. 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30048 Rev. 8 - 2
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MMBT6427
ã Diodes Incorporated
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance
Note:
@ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO Min 40 40 12 ¾ ¾ ¾ 10,000 20,000 14,000 ¾ ¾ ¾ Max ¾ ¾ ¾ 50 1.0 50 100,000 200,000 140,000 1.2 1.5 2.0 1.75 Unit V V V nA mA nA Test Condition IC = 100mA, IE = 0 IC = 10mA, IB = 0 IE = 10mA, IC = 0 VCB = 30V, IE = 0 VCE = 25V, IB = 0 VEB = 10V, IC = 0 IC = 10mA, VCE = 5.0V IC = 100mA, VCE = 5.0V IC = 500mA, VCE = 5.0V IC = 50mA, IB = 0.5mA IC = 500mA, IB = 0.5mA IC = 500mA, IB = 0.5mA IC = 50mA, VCE =5.0V VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0
hFE VCE(SAT) VBE(SAT) VBE(ON) Cobo Cibo
¾ V V V pF pF
8.0 Typical 15 Typical
3. Short duration pulse test used to minimize self-heating effect.
400
VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
Note 2 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 1
IC IB = 1000 TA = -50°C
TA = 25°C
TA = 150°C
10
100
1000
IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
DS30048 Rev. 8 - 2
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MMBT6427
1,000,000 VCE = 5V TA = 150°C
hFE, DC CURRENT GAIN
100,000
10,000 TA = -50°C
TA = 25°C
1,000
1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE = 5V
TA = -50°C
TA = 25°C
TA = 150°C
100 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current
1
10
100
IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current
1000 VCE = 5V
fT, GAIN BANDWIDTH PRODUCT (MHz)
100
10
1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs Collector Current 100
Ordering Information (Note 4)
Device MMBT6427-7-F
Notes:
Packaging SOT-23
Shipping 3000/Tape & Reel
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K1D = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
K1D
Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M March 3
2002 N Apr 4
YM
2003 P
2004 R
2005 S
2006 T Jul 7
2007 U Aug 8
2008 V Sep 9
2009 W Oct O
2010 X
2011 Y Nov N
2012 Z Dec D
May 5
Jun 6
DS30048 Rev. 8 - 2
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MMBT6427
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30048 Rev. 8 - 2
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MMBT6427