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MMBTA13_1

MMBTA13_1

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MMBTA13_1 - NPN SURFACE MOUNT DARLINGTON TRANSISTOR - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBTA13_1 数据手册
SPICE MODELS: MMBTA13 MMBTA14 MMBTA13 / MMBTA14 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Complementary PNP Types Available (MMBTA63 /MMBTA64) Ideal for Medium Power Amplification and Switching High Current Gain Lead Free/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability A C B B E TOP VIEW SOT-23 Dim C Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° A B C D E G H J K E • D G H K J L Mechanical Data • • • • • • • • • Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). MMBTA13 Marking (See Page 3): K2D, K3D MMBTA14 Marking (See Page 3): K3D Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approximate) M C L M α All Dimensions in mm B E • Maximum Ratings @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RθJA Tj, TSTG Value 30 30 10 300 300 417 -55 to +150 Unit V V V mA mW °CW °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain @TA = 25°C unless otherwise specified Symbol V(BR)CEO ICBO IEBO MMBTA13 MMBTA14 MMBTA13 MMBTA14 Min 30 ⎯ ⎯ 5,000 10,000 10,000 20,000 ⎯ ⎯ Max ⎯ 100 100 Unit V nA nA Test Condition IC = 100μA VBE = 0V VCB = 30V, IE = 0 VEB = 10V, IC = 0 IC = 10mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 100mA, VCE = 5.0V IC = 100mA, VCE = 5.0V IC = 100mA, IB = 100μA IC = 100mA, VCE = 5.0V VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 5.0V, IC = 10mA, f = 100MHz hFE VCE(SAT) VBE(SAT) Cobo Cibo fT ⎯ 1.5 2.0 ⎯ V V pF pF MHz Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product Note: 8.0 Typical 15 Typical 125 ⎯ 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. DS30047 Rev. 10 - 2 1 of 3 www.diodes.com MMBTA13 / MMBTA14 © Diodes Incorporated 400 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 1.10 1.05 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0 25 50 75 100 125 150 175 200 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 1000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 1 1.6 1.5 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1,000,000 VBE(ON), BASE EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 100,000 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 100 1 10 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current 10,000 1,000 100 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs Collector Current DS30047 Rev. 10 - 2 2 of 3 www.diodes.com MMBTA13 / MMBTA14 © Diodes Incorporated Ordering Information Device MMBTA13-7-F MMBTA14-7-F Notes: 4. (Note 4) Packaging SOT-23 SOT-23 Shipping 3000/Tape & Reel 3000/Tape & Reel For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KxD KxD = Product Type Marking Code, ex: K2D = MMBTA13 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code YM 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P May 5 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30047 Rev. 10 - 2 3 of 3 www.diodes.com MMBTA13 / MMBTA14 © Diodes Incorporated
MMBTA13_1
1. 物料型号: - MMBTA13 - MMBTA14

2. 器件简介: - 这些是NPN型表面贴装达林顿晶体管,采用外延平面芯片结构,具有互补的PNP类型(MMBTA63/MMBTA64)。 - 适用于中等功率放大和开关应用,具有高电流增益。 - 无铅/符合RoHS标准,符合AEC-Q101高可靠性标准。

3. 引脚分配: - 采用SOT-23封装,具体引脚连接见图示。

4. 参数特性: - 集电极-基极电压(VCBO):30V - 集电极-发射极电压(VCEO):30V - 发射极-基极电压(VEBO):10V - 集电极电流-连续(Ic):300mA - 功率耗散(Pd):300mW - 热阻,结到环境(RoJA):417°C/W - 工作和存储温度范围:-55到+150°C

5. 功能详解: - 关闭特性包括集电极-发射极击穿电压和集电极截止电流等。 - 打开特性包括直流电流增益(hFE)和集电极-发射极饱和电压等。 - 小信号特性包括输出电容、输入电容和电流增益-带宽积等。

6. 应用信息: - 适用于中等功率放大和开关应用。

7. 封装信息: - 封装类型:SOT-23 - 无铅镀层(亚锡表面处理,覆盖合金42引线框架)。 - 尺寸和标记信息详见数据手册。
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