MMBTA28-7

MMBTA28 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features NEW PRODUCT · · · · · · · · · · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain Case: SOT-23, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K6R Weight: 0.008 grams (approx.) Ordering & Date Code Information: See Page 2 SOT-23 A C B B TOP VIEW E E D G H K J D L M C Dim A B C D E G H J K L M a Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° Mechanical Data C All Dimensions in mm B E Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBTA28 80 80 12 500 300 417 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Collector Current - Continuous Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product Notes: @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO Min 80 12 80 ¾ ¾ 10,000 10,000 ¾ ¾ Max ¾ ¾ ¾ 100 100 Unit V V V nA nA Test Condition IC = 100mA IE = 0 IE = 100mA IC = 0 IC = 100mA IB = 0 VCB = 60V, IE = 0 VEB = 10V, IC = 0 IC = 10mA, VCE = 5.0V IC = 100mA, VCE = 5.0V IC = 100mA, IB = 100mA IC = 100mA, VCE = 5.0V VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 5.0V, IC = 10mA, f = 100MHz hFE VCE(SAT) VBE(SAT) Cobo Cibo fT ¾ 1.5 2.0 ¾ V V pF pF MHz 8.0 Typical 15 Typical 125 ¾ 1. Device mounted on FR-4 PCB, 1.6x1.6x0.06 nch pad layout as shown on Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. DS30367 Rev. 2 - 2 1 of 3 www.diodes.com MMBTA28 Ordering Information (Note 3) NEW PRODUCT Device MMBTA28-7 Notes: Packaging SOT-23 Shipping 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K6R K6R = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 2002 N Apr 4 2003 P May 5 2004 R Jun 6 Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D YM VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current TA = 25°C IC IB = 1000 TA = -50°C 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature TA = 150°C DS30367 Rev. 2 - 2 2 of 3 www.diodes.com MMBTA28 1. 6 VBE(ON), BASE-EMITTER VOLTAGE (V) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Base-Emitter Voltage vs. Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100000 hFE, DC CURRENT GAIN (NORMALIZED) VCE = 5V TA = -50°C VCE = 5V NEW PRODUCT 10000 TA = 150°C TA = 25°C 10000 TA = 25°C TA = -50°C TA = 150°C 1000 100 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical DC Current Gain vs. Collector Current 100 10 1 1 10 COLLECTOR CURRENT IC (mA) Fig. 5 Typical Gain Bandwidth Product vs. Collector Current 100 DS30367 Rev. 2 - 2 3 of 3 www.diodes.com MMBTA28