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MMBTA28_1

MMBTA28_1

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MMBTA28_1 - NPN SURFACE MOUNT DARLINGTON TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
MMBTA28_1 数据手册
SPICE MODEL: MMBTA28 Pb Lead-free MMBTA28 SOT-23 A C B C NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Current Gain Lead Free/RoHS Compliant (Note 3) Dim A B C D E G K J D L M B TOP VIEW E E D G H Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° Mechanical Data • • • • • • • • • Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking (See Page 3): K6R Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approximate) H J K L M α C All Dimensions in mm B E Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RθJA Tj, TSTG Value 80 80 12 500 300 417 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product Notes: 1. 2. 3. @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)EBO V(BR)CEO ICBO ICES IEBO Min 80 12 80    10,000 10,000   Max    100 500 100 Unit V V V nA nA nA Test Condition IC = 100µA IE = 0 IE = 100µA IC = 0 IC = 100µA IB = 0 VCB = 60V, IE = 0 VCE = 10V VEB = 10V, IC = 0 IC = 10mA, VCE = 5.0V IC = 100mA, VCE = 5.0V IC = 100mA, IB = 100µA IC = 100mA, VCE = 5.0V VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 5.0V, IC = 10mA, f = 100MHz hFE VCE(SAT) VBE(SAT) Cobo Cibo fT  1.5 2.0  V V pF pF MHz 8.0 Typical 15 Typical 125  Device mounted on FR-4 PCB, 1.6x1.6x0.06 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Short duration pulse test used to minimize self-heating effect. No purposefully added lead. DS30367 Rev. 8 - 2 1 of 3 www.diodes.com MMBTA28 © Diodes Incorporated VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 400 Note 1 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 100 1000 TA = 25°C IC IB = 1000 TA = -50°C TA = 150°C 1.6 VBE(ON), BASE-EMITTER VOLTAGE (V) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Base-Emitter Voltage vs. Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V IC, COLLECTOR CURRENT (mA) Fig. 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1,000,000 VCE = 5V VCE = 5V TA = -50°C hFE, DC CURRENT GAIN 100,000 TA = 150°C TA = 25°C 10,000 TA = 25°C TA = -50°C TA = 150°C 1000 100 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical DC Current Gain vs. Collector Current 100 10 1 1 10 COLLECTOR CURRENT IC (mA) Fig. 5 Typical Gain Bandwidth Product vs. Collector Current 100 DS30367 Rev. 8 - 2 2 of 3 www.diodes.com MMBTA28 Ordering Information Device MMBTA28-7-F Notes: (Note 4) Packaging SOT-23 Shipping 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K6R YM K6R = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 Feb 2 Mar 3 2006 T Apr 4 2007 U May 5 2008 V Jun 6 Jul 7 2009 W Aug 8 2010 X Sep 9 Oct O 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30367 Rev. 8 - 2 3 of 3 www.diodes.com MMBTA28
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