MMBTA55-7-F

MMBTA55-7-F

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MMBTA55-7-F - PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBTA55-7-F 数据手册
MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available (MMBTA05 / MMBTA06) Ideal for Low Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 3 and 4) Qualified to AEC-Q101 Standards for High Reliability A C B B E TOP VIEW SOT-23 Dim C Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° A B C D E G H J K E D G H K J L Mechanical Data • • • • • • • • • Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020d Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). MMBTA55 Marking (See Page 3): K2H, K2G MMBTA56 Marking (See Page 3): K2G Ordering Information: See Page 3 Weight: 0.008 grams (approximate) @TA = 25°C unless otherwise specified M C L M α All Dimensions in mm B E • Maximum Ratings Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Symbol VCBO VCEO VEBO IC Pd RθJA Tj, TSTG MMBTA55 -60 -60 -4.0 -500 300 417 MMBTA56 -80 -80 Unit V V V mA mW °C/W °C -55 to +150 Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product @TA = 25°C unless otherwise specified Symbol MMBTA55 MMBTA56 MMBTA55 MMBTA56 MMBTA55 MMBTA56 MMBTA55 MMBTA56 V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX Min -60 -80 -60 -80 -4.0 ⎯ ⎯ Max ⎯ ⎯ ⎯ -100 -100 Unit V V V nA nA Test Condition IC = -100μA, IE = 0 IC = -1.0mA, IB = 0 IE = -100μA, IC = 0 VCB = -60V, IE = 0 VCB = -80V, IE = 0 VCE = -60V, IBO = 0V VCE = -80V, IBO = 0V IC = -10mA, VCE = -1.0V IC = -100mA, VCE = -1.0V IC = -100mA, IB = -10mA IC = -100mA, VCE = -1.0V VCE = -1.0V, IC = -100mA, f = 100MHz hFE VCE(SAT) VBE(SAT) fT 100 ⎯ ⎯ 50 ⎯ -0.25 -1.2 ⎯ ⎯ V V MHz Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. Halogen and Antimony Free. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30054 Rev. 11 - 2 1 of 3 www.diodes.com MMBTA55 / MMBTA56 © Diodes Incorporated 400 Note 1 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs Ambient Temperature 200 0.25 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC IB = 10 0.20 TA = 25°C 0.15 0.10 TA = 150°C 0.05 TA = -50°C 0 1 1,000 100 10 IC, COLLECTOR CURRENT (mA) Fig. 2 Collector Emitter Saturation Voltage vs. Collector Current 1,000 VCE = 5V 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Base Emitter Voltage vs. Collector Current TA = 150°C TA = -50°C TA = 25°C VCE = 5V TA = 150°C hFE, DC CURRENT GAIN 100 TA = 25°C TA = -50°C 10 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 3 DC Current Gain vs. Collector Current 100 fT, GAIN-BANDWIDTH PRODUCT (MHz) VCE = 5V 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Gain-Bandwidth Product vs. Collector Current 1 DS30054 Rev. 11 - 2 2 of 3 www.diodes.com MMBTA55 / MMBTA56 © Diodes Incorporated Ordering Information Device MMBTA55-7-F MMBTA56-7-F Notes: 5. (Note 5) Packaging SOT-23 SOT-23 Shipping 3000/Tape & Reel 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K2x K2x = Product Type Marking Code, ex: K2H = MMBTA55 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code YM 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P May 5 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30054 Rev. 11 - 2 3 of 3 www.diodes.com MMBTA55 / MMBTA56 © Diodes Incorporated
MMBTA55-7-F
物料型号: - MMBTA55-7-F - MMBTA56-7-F

器件简介: MMBTA55和MMBTA56是PNP小信号表面贴装晶体管,采用外延平面芯片结构,SOT-23封装。它们是互补的NPN类型(MMBTA05/MMBTA06),适用于低功耗放大和开关应用,无铅、无卤素和锑,符合RoHS标准,是“绿色”设备,并通过了AEC-Q101标准的高可靠性认证。

引脚分配: 文档中提供了引脚连接的图示,但具体分配未在文本中详细说明。

参数特性: - 集电极-基极电压(VCBO):MMBTA55为-60V,MMBTA56为-80V - 集电极-发射极电压(VCEO):MMBTA55为-60V,MMBTA56为-80V - 发射极-基极电压(VEBO):-4.0V - 集电极电流(IC):连续-500mA - 功率耗散(Pd):300mW - 热阻,结到环境(RθJA):417°C/W - 工作和存储温度范围(Tj, TSTG):-55至+150°C

功能详解: - 关断特性包括集电极-基极击穿电压、集电极-发射极击穿电压和发射极-基极击穿电压。 - 开启特性包括直流电流增益hFE、集电极-发射极饱和电压和基极-发射极饱和电压。 - 小信号特性包括电流增益-带宽积fT。

应用信息: 这些晶体管适用于低功耗放大和开关应用,并且是理想的选择,因为它们具有低功耗和高可靠性。

封装信息: - 封装类型:SOT-23 - 封装材料:模塑塑料,UL阻燃等级94V-0 - 湿度敏感度:J-STD-020d标准的1级 - 无铅镀层(亚锡表面处理,覆盖在合金42框架上)
MMBTA55-7-F 价格&库存

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