MMBTA55

MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · Epitaxial Planar Die Construction Complementary NPN Types Available (MMBTA05 / MMBTA06) Ideal for Medium Power Amplification and Switching B E SOT-23 Dim A C B C Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° A B C D E G K J L M Mechanical Data · · · · · · · · · Case: SOT-23, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram MMBTA55 Marking (See Page 2): K2H MMBTA56 Marking (See Page 2): K2G Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) TOP VIEW E D G H H J K L M a C B E All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBTA55 -60 -60 -4.0 -500 300 417 -55 to +150 MMBTA56 -80 -80 Unit V V V mA mW °C/W °C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Notes: @ TA = 25°C unless otherwise specified Symbol MMBTA55 MMBTA56 MMBTA55 MMBTA56 MMBTA55 MMBTA56 MMBTA55 MMBTA56 Min -60 -80 -60 -80 -4.0 ¾ ¾ Max Unit Test Condition V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX ¾ ¾ ¾ -100 -100 V V V nA nA IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -100mA, IC = 0 VCB = -60V, IE = 0 VCB = -80V, IE = 0 VCE = -60V, IBO = 0V VCE = -80V, IBO = 0V IC = -10mA, VCE = -1.0V IC = -100mA, VCE = -1.0V IC = -100mA, IB = -10mA IC = -100mA, VCE = -1.0V VCE = -1.0V, IC = -100mA, f = 100MHz hFE VCE(SAT) VBE(SAT) 100 ¾ ¾ ¾ -0.25 -1.2 ¾ V V fT 50 ¾ MHz 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. DS30054 Rev. 4 - 2 1 of 2 www.diodes.com MMBTA55 / MMBTA56 Ordering Information Device MMBTA55-7 MMBTA56-7 Notes: (Note 3) Packaging SOT-23 Shipping 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K2x K2x = Product Type Marking Code, ex: K2H = MMBTA55 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30054 Rev. 4 - 2 2 of 2 www.diodes.com YM MMBTA55 / MMBTA56