MMBTA55_1

SPICE MODELS: MMBTA55 MMBTA56 Lead-free MMBTA55 / MMBTA56 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · · · · · · · · · · · Epitaxial Planar Die Construction Complementary NPN Types Available (MMBTA05 / MMBTA06) Ideal for Medium Power Amplification and Switching Lead Free/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability B E TOP VIEW SOT-23 A C B E C Dim A B C D E K J L Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° Mechanical Data Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). MMBTA55 Marking (See Page 2): K2H MMBTA56 Marking (See Page 2): K2G Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) D G H G M H J K L M a C B E All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBTA55 -60 -60 -4.0 -500 300 417 -55 to +150 MMBTA56 -80 -80 Unit V V V mA mW °C/W °C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Notes: @ TA = 25°C unless otherwise specified Symbol MMBTA55 MMBTA56 MMBTA55 MMBTA56 MMBTA55 MMBTA56 MMBTA55 MMBTA56 Min -60 -80 -60 -80 -4.0 ¾ ¾ Max Unit Test Condition V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX ¾ ¾ ¾ -100 -100 V V V nA nA IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -100mA, IC = 0 VCB = -60V, IE = 0 VCB = -80V, IE = 0 VCE = -60V, IBO = 0V VCE = -80V, IBO = 0V IC = -10mA, VCE = -1.0V IC = -100mA, VCE = -1.0V IC = -100mA, IB = -10mA IC = -100mA, VCE = -1.0V VCE = -1.0V, IC = -100mA, f = 100MHz hFE VCE(SAT) VBE(SAT) 100 ¾ ¾ ¾ -0.25 -1.2 ¾ V V fT 50 ¾ MHz 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. 3. No purposefully added lead. DS30054 Rev. 9 - 2 1 of 3 www.diodes.com MMBTA55 / MMBTA56 ã Diodes Incorporated Ordering Information Device MMBTA55-7-F MMBTA56-7-F Notes: (Note 4) Packaging SOT-23 Shipping 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K2x Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 K2x = Product Type Marking Code, ex: K2H = MMBTA55 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September YM 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D 0.25 350 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC IB = 10 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 0.20 TA = 25°C 0.15 0.10 TA = 150°C 0.05 TA = -50°C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current DS30054 Rev. 9 - 2 2 of 3 www.diodes.com MMBTA55 / MMBTA56 VCE = 5V TA = 150°C VBE(ON), BASE EMITTER VOLTAGE (V) 1000 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current VCE = 5V TA = -50°C TA = 25°C hFE, DC CURRENT GAIN (NORMALIZED) 100 TA = 25°C TA = -50°C TA = 150°C 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Base Emitter Voltage vs. Collector Current 100 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Gain Bandwidth Product vs. Collector Current 1 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30054 Rev. 9 - 2 3 of 3 www.diodes.com MMBTA55 / MMBTA56