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MMBTA64

MMBTA64

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MMBTA64 - PNP SURFACE MOUNT DARLINGTON TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
MMBTA64 数据手册
MMBTA63 / MMBTA64 PNP SURFACE MOUNT DARLINGTON TRANSISTOR Features · · · · · · · · · · · · · Epitaxial Planar Die Construction Complementary NPN Types Available (MMBTA13 / MMBTA14) Ideal for Medium Power Amplification and Switching High Current Gain E SOT-23 A C TOP VIEW Dim A B E C Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° B C D E G M L B D G H Mechanical Data Case: SOT-23, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram MMBTA63 Marking (See Page 2): K2E, K3E MMBTA64 Marking (See Page 2): K3E Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) K J D H J K L M a C All Dimensions in mm B E Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBTA63 -30 -30 -10 -500 300 417 -55 to +150 MMBTA64 Unit V V V mA mW °C/W °C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain @ TA = 25°C unless otherwise specified Symbol V(BR)CEO ICBO IEBO MMBTA63 MMBTA64 MMBTA63 MMBTA64 Min -30 ¾ ¾ 5,000 10,000 10,000 20,000 ¾ ¾ Max ¾ -100 -100 Unit V nA nA Test Condition IC = -100mA VBE = 0V VCB = -30V, IE = 0 VEB = -10V, IC = 0 IC = -10mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -100mA, VCE = -5.0V IC = -100mA, VCE = -5.0V IC = -100mA, IB = -100mA IC = -100mA, VCE = -5.0V VCE = -5.0V, IC = -10mA, f = 100MHz hFE VCE(SAT) VBE(SAT) ¾ -1.5 -2.0 ¾ V V Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Notes: fT 125 ¾ MHz 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. DS30055 Rev. 3 - 2 1 of 2 www.diodes.com MMBTA63 / MMBTA64 Ordering Information Device MMBTA63-7 MMBTA64-7 Notes: (Note 3) Packaging SOT-23 Shipping 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KxE KxE = Product Type Marking Code, ex: K2E = MMBTA63 YM = Date Code Marking Y = Year ex: N = 2002 Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30055 Rev. 3 - 2 2 of 2 www.diodes.com YM MMBTA63 / MMBTA64
MMBTA64 价格&库存

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MMBTA64
  •  国内价格
  • 50+0.111
  • 500+0.0999
  • 5000+0.0925
  • 10000+0.0888
  • 30000+0.0851
  • 50000+0.08288

库存:0