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MMBTH10-7

MMBTH10-7

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MMBTH10-7 - NPN SURFACE MOUNT VHF/UHF TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
MMBTH10-7 数据手册
MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR Features · · · Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications with collector currents in the 100mA - 30 mA Range E SOT-23 A C TOP VIEW Dim A B E C Min 0.37 1.20 A Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° M B C C TOP VIEW B D G H 2.30 B E D C 0.89 Mechanical Data · · · · · · · · Case: SOT-23, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K3H, K3Y Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) D E G B E 0.45 1.78 K J K J L H G M H J C K B 2.80 L 0.013 0.903 E C L M a 0.45 0.085 0° B E All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMBTH10 30 25 3.0 50 300 417 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter On Voltage SMALL SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product Collector-Base Capacitance Collector-Base Feedback Capacitance Collector-Base Time Constant Note: @ TA = 25°C unless otherwise specified Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE VCE(SAT) VBE(SAT) fT CCB CRB Rb’Cc Min 25 30 3.0 ¾ ¾ 60 ¾ ¾ 650 ¾ ¾ ¾ Max ¾ ¾ ¾ 100 100 ¾ 0.5 0.95 ¾ 0.7 0.65 9 Unit V V V nA nA ¾ V V MHz pF pF ps Test Condition IC = 1mA IB = 0 IC = 100mA, IE = 0 IE = 10mA, IC = 0 VCB = 25V, IE = 0 VEB = 2V, IC = 0 IC = 4mA, VCE = 10.0V IC = 4mA, IB = 400mA IC = 4mA, VCE = 10.0V VCE = 10V, f = 100MHz, IC = 4mA VCB = 10V, f = 1.0MHz, IE = 0 VCB = 10V, f = 1.0MHz, IE = 0 VCB = 10V, f = 31.8MHz, IC = 4mA 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. DS31031 Rev. 4 - 2 1 of 2 www.diodes.com MMBTH10 Ordering Information Device MMBTH10-7 Notes: (Note 3) Packaging SOT-23 Shipping 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K3x K3x = Product Type Marking Code, e.g. K3H YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS31031 Rev. 4 - 2 2 of 2 www.diodes.com YM MMBTH10
MMBTH10-7 价格&库存

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