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MMDT2222A_2

MMDT2222A_2

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MMDT2222A_2 - DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
MMDT2222A_2 数据手册
MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMDT2907A) Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A C2 B1 E1 SOT-363 Dim BC Min 0.10 1.15 2.00 0.30 1.80 — 0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° A B C D F M Mechanical Data • • • • • • • • • Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe) Terminal Connections: See Diagram Marking Information: K1P, See Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.006 grams (approximate) K E2 B2 C1 H 0.65 Nominal H J K L M α J D C2 B1 E1 F L E2 B2 C1 All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RθJA Tj, TSTG Value 75 40 6.0 600 200 625 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Collector Current - Continuous (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30125 Rev. 12 - 2 1 of 4 www.diodes.com MMDT2222A © Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO IBL Min 75 40 6.0 ⎯ ⎯ ⎯ ⎯ 35 50 75 100 40 50 35 ⎯ 0.6 ⎯ ⎯ — 300 ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ 10 10 10 20 ⎯ ⎯ ⎯ 300 ⎯ ⎯ ⎯ 0.3 1.0 1.2 2.0 8 25 ⎯ 4.0 Unit V V V nA μA nA nA nA Test Condition IC = 10μA, IE = 0 IC = 10mA, IB = 0 IE = 10μA, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150°C VCE = 60V, VEB(OFF) = 3.0V VEB = 3.0V, IC = 0 VCE = 60V, VEB(OFF) = 3.0V IC = 100μA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55°C IC = 150mA, VCE = 1.0V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 20V, IC = 20mA, f = 100MHz VCE = 10V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA DC Current Gain hFE ⎯ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: 5. Short duration pulse test used to minimize self-heating effect. VCE(SAT) VBE(SAT) V V Cobo Cibo fT NF pF pF MHz dB td tr ts tf 10 25 225 60 ns ns ns ns 1,000 PD, POWER DISSIPATION (mW) 200 TA = 125°C hFE, DC CURRENT GAIN 150 100 TA = -25°C TA = +25°C 100 10 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs. Ambient Temperature VCE = 1.0V 200 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2, Typical DC Current Gain vs. Collector Current 1,000 DS30125 Rev. 12 - 2 2 of 4 www.diodes.com MMDT2222A © Diodes Incorporated 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) f = 1MHz 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.1 10 1 IB, BASE CURRENT (mA) Fig. 4, Typical Collector Saturation Region 0.01 100 IC = 30mA IC = 1mA IC = 10mA IC = 100mA IC = 300mA CAPACITANCE (pF) 30 20 10 5.0 Cobo Cibo 1.0 0.1 1.0 10 50 VR, REVERSE VOLTAGE (V) Fig. 3, Typical Capacitance Characteristics 0.5 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.4 TA = 25°C VBE(ON), BASE-EMITTER VOLTAGE (V) IC IB = 10 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE = 5V T A = -50°C 0.3 TA = 150°C TA = 25°C 0.2 TA = 150°C 0.1 T A = -50°C 0 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6, Typical Base-Emitter Voltage vs. Collector Current 1,000 fT, GAIN BANDWIDTH PRODUCT (MHz) 100 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 7, Typical Gain Bandwidth Product vs. Collector Current 100 DS30125 Rev. 12 - 2 3 of 4 www.diodes.com MMDT2222A © Diodes Incorporated Ordering Information Device (Note 6) Packaging SOT-363 Shipping 3000/Tape & Reel MMDT2222A-7-F Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K1P YM K1P YM Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P DS30125 Rev. 12 - 2 K1P = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D May 5 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 4 of 4 www.diodes.com MMDT2222A © Diodes Incorporated
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