MMDT2222V-7

SPICE MODEL: MMDT2222V Lead-free Green MMDT2222V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features · · · · · · · · · · · · · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMDT2907V) Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability A SOT-563 BC Dim A B C D G Min 0.15 1.10 1.55 0.90 1.50 0.56 0.10 0.10 Max 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18 Typ 0.25 1.20 1.60 1.00 1.60 0.60 0.20 ¾ D G Case: SOT-563, Molded Plastic Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish ¾ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.003 grams (approx.) E1 B1 C2 Mechanical Data K M H H K L L M C1 B2 E2 All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Tj, TSTG Value 75 40 6.0 600 -55 to +150 Unit V V V mA °C Characteristic Operating and Storage and Temperature Range Thermal Characteristics Characteristic Total Power Dissipation (Note 3) @ TA = 25°C unless otherwise specified Symbol Pd RqJA Value 150 833 Unit mW °C/W Thermal Resistance, Junction to Ambient (Note 3) Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30563 Rev. 4 - 2 1 of 4 www.diodes.com MMDT2222V ã Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO IBL Min 75 40 6.0 ¾ ¾ ¾ ¾ 35 50 75 100 40 50 35 ¾ 0.6 ¾ ¾ — 300 ¾ Max ¾ ¾ ¾ 10 10 10 20 ¾ ¾ ¾ 300 ¾ ¾ ¾ 0.3 1.0 1.2 2.0 8 25 ¾ 4.0 Unit V V V nA mA nA nA nA Test Condition IC = 10mA, IE = 0 IC = 10mA, IB = 0 IE = 10mA, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150°C VCE = 60V, VEB(OFF) = 3.0V VEB = 3.0V, IC = 0 VCE = 60V, VEB(OFF) = 3.0V IC = 100mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55°C IC = 150mA, VCE = 1.0V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 20V, IC = 20mA, f = 100MHz VCE = 10V, IC = 100mA, RS = 1.0kW, f = 1.0kHz VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: VCE(SAT) VBE(SAT) V V Cobo Cibo fT NF pF pF MHz dB td tr ts tf ¾ ¾ ¾ ¾ 10 25 225 60 ns ns ns ns 4. Short duration test pulse used to minimize self-heating effect. DS30563 Rev. 4 - 2 2 of 4 www.diodes.com MMDT2222V 200 1000 NEW PRODUCT Pd, POWER DISSIPATION (mW) 150 hFE, DC CURRENT GAIN TA = 125°C 100 TA = -25°C TA = +25°C 100 10 50 VCE = 1.0V 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (° C) Fig. 1, Derating Curve - Total 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current 35 VCE, COLLECTOR-EMITTER VOLTAGE (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IC = 300mA IC = 30mA IC = 1mA IC = 10mA IC = 100mA 30 CT, CAPACITANCE (pF) 25 20 15 10 5 0 Cobo Cibo 0 2 4 6 8 10 12 14 16 18 20 VR, REVERSE VOLTS (V) Fig. 3 Typical Capacitance Characteristics IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 1.0 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC IB = 10 0.4 TA = 25°C 0.3 TA = 150°C 0.2 VBE(ON), BASE EMITTER VOLTAGE (V) 0.5 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE = 5V TA = -50°C TA = 25°C TA = 150°C 0.1 TA = -50°C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current DS30563 Rev. 4 - 2 3 of 4 www.diodes.com MMDT2222V 1000 NEW PRODUCT fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current 1 Ordering Information (Note 5) Device MMDT2222V-7 Notes: Packaging SOT-563 Shipping 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KAT YM KAT = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 Apr 4 May 5 Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30563 Rev. 4 - 2 4 of 4 www.diodes.com MMDT2222V