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MMDT2227M-7

MMDT2227M-7

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MMDT2227M-7 - COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR - Diodes Incorporated

  • 数据手册
  • 价格&库存
MMDT2227M-7 数据手册
SPICE MODEL: MMDT2227M MMDT2227M Lead-free Green COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · · Complementary Pair Epitaxial Planar Die Construction One 2222A Type (NPN), One 2907A Type (PNP) Ideal for Low Power Amplification and Switching Lead Free By Design/RoHS Compliant (Note 2) "Green Device" (Note 3) K E2 B2 C1 C2 A B1 E1 SOT-26 Dim BC Min 0.35 1.50 2.70 ¾ ¾ 2.90 1.00 0.35 0.10 0° Max 0.50 1.70 3.00 ¾ ¾ 3.10 1.30 0.55 0.20 8° Typ 0.38 1.60 2.80 0.95 0.55 3.00 0.05 1.10 0.40 0.15 ¾ A B C D M H F H J K L M a Mechanical Data · · · · · · · · Case: SOT-26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Ordering & Date Code Information: See Page 3 Marking (See Page 3): K27 Weight: 0.006 grams (approximate) J D F L 0.013 0.10 Note: E1, B1, and C1 = 2907A Type (PNP), E2, B2, and C2 = 2222A Type (NPN). Type marking indicates orientation. C2 B1 E1 All Dimensions in mm E2 B2 C1 Maximum Ratings, 2222A Type (NPN) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC 2222A (NPN) 75 40 6.0 600 Unit V V V mA Maximum Ratings, 2907A Type (PNP) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC 2907A (PNP) -60 -60 -5.0 -600 Unit V V V mA Maximum Ratings, Total Characteristic Total Power Dissipation (Note 1) @ TA = 25°C unless otherwise specified Symbol Pd RqJA Tj, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30718 Rev. 4 - 2 1 of 4 www.diodes.com MMDT2227M ã Diodes Incorporated Electrical Characteristics, 2222A Type (NPN) Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO IBL Symbol @ TA = 25°C unless otherwise specified Min 75 40 6.0 ¾ ¾ ¾ ¾ 35 50 75 100 40 50 35 ¾ 0.6 ¾ ¾ — 300 Max ¾ ¾ ¾ 10 10 10 20 ¾ ¾ ¾ 300 ¾ ¾ ¾ 0.3 1.0 1.2 2.0 8 25 ¾ Unit V V V nA mA nA nA nA Test Condition IC = 10mA, IE = 0 IC = 10mA, IB = 0 IE = 10mA, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150°C VCE = 60V, VEB(OFF) = 3.0V VEB = 3.0V, IC = 0 VCE = 60V, VEB(OFF) = 3.0V IC = 100mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55°C IC = 150mA, VCE = 1.0V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 20V, IC = 20mA, f = 100MHz DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Note: 4. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. VCE(SAT) VBE(SAT) V V Cobo Cibo fT pF pF MHz td tr ts tf ¾ ¾ ¾ ¾ 10 25 225 60 ns ns ns ns VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA DS30718 Rev. 4 - 2 2 of 4 www.diodes.com MMDT2227M Electrical Characteristics, 2907A Type (PNP) Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBL Symbol @ TA = 25°C unless otherwise specified Min -60 -60 -5.0 ¾ ¾ ¾ 75 100 100 100 50 ¾ ¾ Max ¾ ¾ ¾ -10 -50 -50 ¾ ¾ ¾ 300 ¾ -0.4 -1.6 -1.3 -2.6 8.0 30 ¾ Unit V V V nA mA nA nA Test Condition IC = -10mA, IE = 0 IC = -10mA, IB = 0 IE = -10mA, IC = 0 VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 125°C VCE = -30V, VEB(OFF) = -0.5V VCE = -30V, VEB(OFF) = -0.5V IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -10V -10V -10V -10V -10V DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Note: VCE(SAT) VBE(SAT) V V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -2.0V, f = 1.0MHz, IC = 0 VCE = -20V, IC = -50mA, f = 100MHz Cobo Cibo fT ¾ — 200 pF pF MHz ton td tr toff ts tf ¾ ¾ ¾ ¾ ¾ ¾ 45 10 40 100 80 30 ns ns ns ns ns ns VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA VCC = -30V, IC = -150mA, IB1 = -15mA 5. Short duration pulse test used to minimize self-heating effect. Ordering Information Device (Note 6) Packaging SOT-26 Shipping 3000/Tape & Reel MMDT2227M-7 Note: 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K27 Date Code Key Year Code Month Code 2005 S Jan 1 Feb 2 2006 T March 3 Apr 4 2007 U May 5 K27 = Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September YM 2008 V 2009 W Jul 7 Aug 8 2010 X Sep 9 2011 Y Oct O Nov N 2012 Z Dec D Jun 6 DS30718 Rev. 4 - 2 3 of 4 www.diodes.com MMDT2227M 100 VCE COLLECTOR-EMITTER VOLTAGE (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IC = 300mA IC = 30mA IC = 1mA IC = 10mA IC = 100mA CAPACITANCE (pF) Cibo 10 Cobo 1.0 0.1 1.0 10 50 VR, REVERSE VOLTS (V) Fig. 1 (2222A) Typical Capacitance IB, BASE CURRENT (mA) Fig. 2 (2222A) Typical Collector Saturation Region VCE COLLECTOR-EMITTER VOLTAGE (V) 100 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.001 IC = -1mA IC = -10mA IC = -100mA IC = -30mA IC = -300mA CAPACITANCE (pF) Cibo 10 Cobo 1 0.1 1 10 100 -0.01 -0.1 -1 -10 -100 VR, REVERSE VOLTS (V) Fig. 3 (2907A) Typical Capacitance IB, BASE CURRENT (mA) Fig. 4 (2907A) Typical Collector Saturation Region IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30718 Rev. 4 - 2 4 of 4 www.diodes.com MMDT2227M
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