MMDT2907V

SPICE MODEL: MMDT2907V Lead-free Green MMDT2907V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features · · · · · · Epitaxial Planar Die Construction Complementary NPN Type Available (MMDT2222V) Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability D G BC A SOT-563 Dim A B C D G K H M Min 0.15 1.10 1.55 0.90 1.50 0.56 0.10 0.10 Max 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18 Typ 0.25 1.20 1.60 1.00 1.60 0.60 0.20 ¾ Mechanical Data · · · · · · · · Case: SOT-563, Molded Plastic Case Material: Molded Plastic, "Green" Molding Compound, UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish ¾ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.003 grams (approx.) C1 H K L L M All Dimensions in mm B2 E2 E1 B1 C2 Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Tj, TSTG Value -60 -60 -5.0 -600 -55 to +150 Unit V V V mA °C Characteristic Collector Current - Continuous Operating and Storage and Temperature Range Thermal Characteristics Characteristic Total Power Dissipation (Note 3) @ TA = 25°C unless otherwise specified Symbol Pd RqJA Value 150 833 Unit mW °C/W Thermal Resistance, Junction to Ambient (Note 3) Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30564 Rev. 4 - 2 1 of 4 www.diodes.com MMDT2907V ã Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBL Min -60 -60 -5.0 ¾ ¾ ¾ 75 100 100 100 50 ¾ ¾ Max ¾ ¾ ¾ -10 -50 -50 ¾ ¾ ¾ 300 ¾ -0.4 -1.6 -1.3 -2.6 8.0 30 ¾ Unit V V V nA mA nA nA Test Condition IC = -10mA, IE = 0 IC = -10mA, IB = 0 IE = -10mA, IC = 0 VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 125°C VCE = -30V, VEB(OFF) = -0.5V VCE = -30V, VEB(OFF) = -0.5V IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -10V -10V -10V -10V -10V DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Notes: VCE(SAT) VBE(SAT) V V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -2.0V, f = 1.0MHz, IC = 0 VCE = -20V, IC = -50mA, f = 100MHz Cobo Cibo fT ¾ — 200 pF pF MHz toff td tr toff ¾ ¾ ¾ ¾ 45 10 40 100 ns ns ns ns VCC = -30V, IC = -150mA, IB1 = -15mA 4. Short duration test pulse used to minimize self-heating effect. DS30564 Rev. 4 - 2 2 of 4 www.diodes.com MMDT2907V 250 NEW PRODUCT 35 30 Pd, POWER DISSIPATION (mW) 200 CT, CAPACITANCE (pF) 25 20 Cibo 15 10 Cobo 5 150 100 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (° C) Fig. 1, Derating Curve - Total 0 0 2 4 6 8 10 12 14 16 18 20 VR, REVERSE VOLTS (V) Fig. 2 Typical Capacitance Characteristics VCE, COLLECTOR-EMITTER VOLTAGE (V) -1.6 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) -0.6 IC = -10mA IC = -1mA IC = -300mA IC = -100mA -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.001 -0.5 -0.4 IC = 10 IB IC = -30mA -0.3 TA = 150°C -0.2 TA = 25°C -0.1 TA = -50°C 0 -0.01 -0.1 -1 -10 -100 -1 -10 -100 -1000 IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region IC, COLLECTOR CURRENT (mA) Fig. 4, Collector Emitter Saturation Voltage vs. Collector Current DS30564 Rev. 4 - 2 3 of 4 www.diodes.com MMDT2907V 1000 -1.0 NEW PRODUCT VBE(ON), BASE EMITTER VOLTAGE (V) VCE = -5V TA = 150°C VCE = -5V -0.9 -0.8 -0.7 -0.6 TA = 25°C -0.5 -0.4 -0.3 -0.2 TA = 150°C TA = -50°C hFE, DC CURRENT GAIN (NORMALIZED) 100 TA = 25°C TA = -50°C 10 1 -1 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs Collector Current -0.1 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Fig. 6, Base Emitter Voltage vs. Collector Current 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = -5V 100 10 1 -1 -10 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs. Collector Current -100 Ordering Information Device MMDT2907V-7 Notes: (Note 5) Packaging SOT-563 Shipping 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KAU = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September 2004 R March 3 Apr 4 May 5 Jun 6 Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D KAU YM Date Code Key Year Code Month Code Jan 1 Feb 2 DS30564 Rev. 4 - 2 4 of 4 www.diodes.com MMDT2907V