MMDT3904S

MMDT3904S NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A NC ADVANCE INFORMATION Dim E1 Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 B1 A B C D F H J M Mechanical Data · · · · · Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: 6M Weight: 0.006 grams (approx.) NC KXX NC BC C1 0.65 Nominal H K K L M J D F L All Dimensions in mm @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMDT3904S 60 40 6.0 200 200 625 -55 to +150 Unit V V V mA mW K/W °C Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30192 Rev. 2P-5 1 of 2 MMDT3904S ADVANCE INFORMATION Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 2) @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 5.0 ¾ ¾ 40 70 100 60 30 ¾ 0.65 ¾ ¾ ¾ 1.0 0.5 100 1.0 300 ¾ Max ¾ ¾ ¾ 50 50 ¾ ¾ 300 ¾ ¾ 0.20 0.30 0.85 0.95 4.0 8.0 10 8.0 400 40 ¾ 5.0 Unit V V V nA nA Test Condition IC = 10mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 50mA, VCE = IC = 100mA, VCE = 1.0V 1.0V 1.0V 1.0V 1.0V DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 Cobo Cibo hie hre hfe hoe fT NF pF pF kW x 10-4 ¾ mS MHz dB VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100mA, RS = 1.0kW, f = 1.0kHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA td tr ts tf ¾ ¾ ¾ ¾ 35 35 200 50 ns ns ns ns Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30192 Rev. 2P-5 2 of 2 MMDT3904S