MMDT3906V

SPICE MODEL: MMDT3906V Pb Lead-free MMDT3906V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features · · · · · Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 1) Qualified to AEC-Q101 Standards for High Reliability E1 B1 C2 C1 A B2 E2 SOT-563 BC Dim A B C D G H K L Min 0.15 1.10 1.55 0.90 1.50 0.56 0.10 0.10 Max 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18 Typ 0.25 1.20 1.60 1.00 1.60 0.60 0.20 0.11 Mechanical Data · · · · · · · · · Case: SOT-563 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 20 Terminals: Lead bearing terminal plating available. See Ordering information Page 4, Note 6 Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.003 grams (approximate) E1 C1 D G K H M L M SEE NOTE 2 B2 E2 All Dimensions in mm B1 C2 Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation (Note 3) @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value -40 -40 -5.0 -200 150 833 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Thermal Resistance, Junction to Ambient Operating and Storage and Temperature Range Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C unless otherwise specified Symbol Pd RqJA Value 150 833 Unit mW °C/W Thermal Resistance, Junction to Ambient Notes: 1. No purposefully added lead. 2. Package is non-polarized. Parts may be on reel in orientation illustrated, 180 ° rotated, or mixed (both ways). 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30467 Rev. 6 - 2 1 of 4 www.diodes.com MMDT3906V ã Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 ¾ ¾ 60 80 100 60 30 ¾ -0.65 ¾ ¾ ¾ 2.0 0.1 100 3.0 250 ¾ Max ¾ ¾ ¾ -50 -50 ¾ ¾ 300 ¾ ¾ -0.25 -0.40 -0.85 -0.95 4.5 10 12 10 400 60 ¾ 4.0 Unit V V V nA nA Test Condition IC = -10mA, IE = 0 IC = -1.0mA, IB = 0 IE = -10mA, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCE = -30V, VEB(OFF) = -3.0V IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -50mA, VCE = IC = -100mA, VCE = -1.0V -1.0V -1.0V -1.0V -1.0V DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: 4. Short duration test pulse used to minimize self-heating. VCE(SAT) VBE(SAT) V V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 Cobo Cibo hie hre hfe hoe fT NF pF pF kW x 10-4 ¾ mS MHz dB VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA td tr ts tf ¾ ¾ ¾ ¾ 35 35 225 75 ns ns ns ns DS30467 Rev. 6 - 2 2 of 4 www.diodes.com MMDT3906V 250 100 f = 1MHz NEW PRODUCT Pd, POWER DISSIPATION (mW) 200 150 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) 10 100 Cibo 50 Cobo 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (° C) Fig. 1, Derating Curve - Total 1 0.1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage 1000 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 10 IC IB = 10 hFE, DC CURRENT GAIN TA = 125°C 1 100 TA = -25°C TA = +25°C 10 0.1 VCE = 1.0V 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 0.01 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.0 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 0.9 0.8 0.7 0.6 IC IB = 10 0.5 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current 100 DS30467 Rev. 6 - 2 3 of 4 www.diodes.com MMDT3906V NEW PRODUCT Ordering Information Device MMDT3906V-7 (Note 5) Packaging SOT-563 SOT-563 Shipping 3000/Tape & Reel 3000/Tape & Reel MMDT3906V-7-L Notes: 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 6. "-L" suffix on part number indicates Pb/Sn terminal plating. "-L" version is a Non Lead-Free, Non RoHS-compliant device. Marking Information KAR = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September KAR YM Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 Apr 4 2004 R May 5 Jun 6 Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30467 Rev. 5 - 2 4 of 4 www.diodes.com MMDT3906V