MMDT3906_1

SPICE MODEL: MMDT3906 Lead-free MMDT3906 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) C2 A B1 E1 SOT-363 Dim BC Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° A B C D F M Mechanical Data · · · · · · · · · · Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 2): K3N Ordering Information: See Below Date Code Information: See Page 2 Weight: 0.006 grams (approximate) K E2 B2 C1 G H 0.65 Nominal H J K L M a J D C2 B1 E1 F L E2 B2 C1 All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation (Note 1) @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value -40 -40 -5.0 -200 200 625 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Thermal Resistance, Junction to Ambient Operating and Storage and Temperature Range Ordering Information Device MMDT3906-7-F Notes: (Note 2) Packaging SOT-363 Shipping 3000/Tape & Reel 1. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 3. No purposefully added lead. DS30124 Rev. 9 - 2 1 of 4 www.diodes.com MMDT3906 ã Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 ¾ ¾ 60 80 100 60 30 ¾ -0.65 ¾ ¾ ¾ 2.0 0.1 100 3.0 250 ¾ Max ¾ ¾ ¾ -50 -50 ¾ ¾ 300 ¾ ¾ -0.25 -0.40 -0.85 -0.95 4.5 10 12 10 400 60 ¾ 4.0 Unit V V V nA nA Test Condition IC = -10mA, IE = 0 IC = -1.0mA, IB = 0 IE = -10mA, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCE = -30V, VEB(OFF) = -3.0V IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -50mA, VCE = IC = -100mA, VCE = -1.0V -1.0V -1.0V -1.0V -1.0V DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: 4. Short duration test pulse used to minimize self-heating. VCE(SAT) VBE(SAT) V V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 Cobo Cibo hie hre hfe hoe fT NF pF pF kW x 10-4 ¾ mS MHz dB VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -100mA, RS = 1.0kW, f = 1.0kHz VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA td tr ts tf ¾ ¾ ¾ ¾ 35 35 225 75 ns ns ns ns Marking Information K3N YM K3N YM Date Code Key Year Code 1998 J Month Code 1999 K 2000 L Jan 1 2001 M Feb 2 2002 N March 3 2003 P Apr 4 2004 R May 5 K3N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2005 S Jun 6 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D DS30124 Rev. 9 - 2 2 of 4 www.diodes.com MMDT3906 200 100 f = 1MHz PD, POWER DISSIPATION (mW) Note 1 150 100 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) 10 50 Cibo Cobo 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1 0.1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage 1000 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 10 IC IB = 10 hFE, DC CURRENT GAIN TA = 125°C 1 100 TA = -25°C TA = +25°C 10 0.1 VCE = 1.0V 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current 0.01 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.0 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 0.9 0.8 0.7 0.6 IC IB = 10 0.5 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current 100 DS30124 Rev. 9 - 2 3 of 4 www.diodes.com MMDT3906 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30124 Rev. 9 - 2 4 of 4 www.diodes.com MMDT3906