MMDT3946LP4-7

MMDT3946LP4 COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS Features • • • • • Complementary Pair: One 3904 (NPN) and One 3906 (PNP) Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant (Note 1) “Green” Device (Note 2) DFN1310H4-6 Dim A Min 1.25 0.95 0.20 0 0.10 0.30 Max 1.38 1.08 0.30 0.40 0.05 0.20 0.50 Typ 1.30 1.00 0.25 0.10 0.20 0.02 0.15 0.40 0.35 0.25 0.05 N EW PRODUCT Top View G H B C D* Mechanical Data • • • • • Case: DFN1310H4-6 Case Material: Molded Plastic. “Green Molding” Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish – NiPdAu over Copper leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 4 C2 B1 Ordering Information: See Page 4 Side View Z R0 .1 50 E** G L N C K L E H K* L* • E1 B D D N A M Z M** N* Z** E2 B2 C1 Internal Schematic (TOP VIEW) Bottom View All Dimensions in mm E1, B1, C1 = PNP3906 Section E2, B2, C2 = NPN3904 Section * Dimensions D, K, L, N Repeat 4X ** Dimensions E, M, Z Repeat 2X Maximum Ratings, NPN 3904 Section Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous Power Dissipation (Notes 3, 4) Thermal Resistance, Junction to Ambient (Note 3) @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RθJA @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RθJA Value -40 -40 -5.0 -200 200 625 Unit V V V mA mW °C/W Value 60 40 6.0 200 200 625 Unit V V V mA mW °C/W Maximum Ratings, PNP 3906 Section Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Notes 3, 4) Thermal Resistance, Junction to Ambient (Note 3) Notes: 1. 2. 3. 4. No purposefully added lead. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB. Maximum combined dissipation. DS30822 Rev. 4 - 2 1 of 5 www.diodes.com MMDT3946LP © Diodes Incorporated Electrical Characteristics, NPN 3904 Section Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 6.0 ⎯ ⎯ 40 70 100 60 30 ⎯ 0.65 ⎯ ⎯ 300 ⎯ ⎯ ⎯ ⎯ @TA = 25°C unless otherwise specified Max ⎯ ⎯ ⎯ 50 50 ⎯ ⎯ 300 ⎯ ⎯ 0.20 0.30 0.85 0.95 4.0 ⎯ 35 35 200 50 Unit V V V nA nA Test Condition IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VCE = 20V, IC = 20mA, f = 100MHz VCC = 3.0V, IC = 10mA, VBE(off) = -0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA N EW PRODUCT DC Current Gain hFE ⎯ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) Cobo fT td tr ts tf V V pF MHz ns ns ns ns Electrical Characteristics, PNP 3906 Section Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 ⎯ ⎯ 60 80 100 60 30 ⎯ -0.65 ⎯ ⎯ 250 ⎯ ⎯ ⎯ ⎯ @TA = 25°C unless otherwise specified Max ⎯ ⎯ ⎯ -50 -50 ⎯ ⎯ 300 ⎯ ⎯ -0.25 -0.40 -0.85 -0.95 4.5 ⎯ 35 35 225 75 Unit V V V nA nA Test Condition IC = -10μA, IE = 0 IC = -1.0mA, IB = 0 IE = -10μA, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCE = -30V, VEB(OFF) = -3.0V IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VCE = -20V, IC = -10mA, f = 100MHz VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA DC Current Gain hFE ⎯ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Notes: 5. VCE(SAT) VBE(SAT) Cobo fT td tr ts tf V V pF MHz ns ns ns ns Short duration test pulse used to minimize self-heating effect. DS30822 Rev. 4 - 2 2 of 5 www.diodes.com MMDT3946LP © Diodes Incorporated 250 PD, POWER DISSIPATION (mW) 200 f = 1MHz 150 N EW PRODUCT 100 50 0 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device) (Note 3) 25 1 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE IC IB = 10 Fig. 2, Typical Output Capacitance Characteristics (NPN-3904) 1,000 T A = 125°C hFE, DC CURRENT GAIN 100 TA = -25°C TA = +25°C 0.1 10 VCE = 1.0V 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current (NPN-3904) 1,000 0.01 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current (NPN-3904) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 10 IC IB = 10 f = 1MHz 1 0.1 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current (NPN-3904) Fig. 6, Typical Output Capacitance Characteristics (PNP-3906) DS30822 Rev. 4 - 2 3 of 5 www.diodes.com MMDT3946LP © Diodes Incorporated 1,000 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC IB = 10 TA = 125°C hFE, DC CURRENT GAIN 100 TA = -25°C TA = +25°C 1 N EW PRODUCT 10 0.1 VCE = 1.0V 1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7, Typical DC Current Gain vs Collector Current (PNP-3906) 1,000 0.01 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8, Typical Collector-Emitter Saturation Voltage vs. Collector Current (PNP-3906) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) IC IB = 10 IC, COLLECTOR CURRENT (mA) Fig. 9, Typical Base-Emitter Saturation Voltage vs. Collector Current (PNP-3906) Ordering Information Device (Note 6) Packaging DFN1310H4-6 Shipping 3000/Tape & Reel MMDT3946LP4-7 Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 46 46= Product Type Marking Code DS30822 Rev. 4 - 2 4 of 5 www.diodes.com MMDT3946LP © Diodes Incorporated N EW PRODUCT IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30822 Rev. 4 - 2 5 of 5 www.diodes.com MMDT3946LP © Diodes Incorporated