MMDT4124

MMDT4124 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMDT4126) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Notes 5 and 6) Mechanical Data • • • • • • • • Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound, Note 6. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) C2 B1 E1 E2 B2 C1 Top View Device Schematic Maximum Ratings @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Value 30 25 5.0 200 Unit V V V mA Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous (Note 1) Thermal Characteristics Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage and Temperature Range (Notes 1 & 2) (Note 1) Symbol PD RθJA TJ, TSTG Value 200 625 -55 to +150 Unit mW °C/W °C Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure Notes: @TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(SAT) VBE(SAT) Cobo Cibo hfe fT NF Min 30 25 5.0 ⎯ ⎯ 120 60 ⎯ ⎯ ⎯ ⎯ 120 300 ⎯ Max ⎯ ⎯ ⎯ 50 50 360 ⎯ 0.30 0.95 4.0 8.0 480 ⎯ 5.0 Unit V V V nA nA ⎯ V V pF pF ⎯ MHz dB Test Condition IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCB = 20V, IE = 0V VEB = 3.0V, IC = 0V IC = 2.0mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 50mA, IB = 5.0mA IC = 50mA, IB = 5.0mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 1.0V, IC = 2.0mA, f = 1.0kHz VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100μA, RS = 1.0kΩ, f = 1.0kHz 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Maximum combined dissipation. 3. No purposefully added lead. 4. Short duration pulse test used to minimize self-heating effect. 5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. MMDT4124 Document number: DS30164 Rev. 10 - 2 1 of 3 www.diodes.com January 2009 © Diodes Incorporated MMDT4124 1,000 350 PD, POWER DISSIPATION (mW) hFE, DC CURRENT GAIN RθJA = 625°C/W 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1) 200 100 10 1 0.1 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current 1 IC IB = 10 VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.1 1 0.01 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.1 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Base-Emitter Saturation Voltage vs. Collector Current 15 f = 1MHz CAPACITANCE (pF) 10 5 Cibo Cobo 0 0.1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 5 Typical Capacitance Characteristics MMDT4124 Document number: DS30164 Rev. 10 - 2 2 of 3 www.diodes.com January 2009 © Diodes Incorporated MMDT4124 Ordering Information Part Number MMDT4124-7-F Notes: (Note 5) Case SOT-363 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K1B YM K1B YM Date Code Key Year 1998 Code J Month Code Jan 1 1999 K 2000 L Feb 2 2001 M Mar 3 2002 N 2003 P Apr 4 2004 R May 5 2005 S K1B = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2006 T Jun 6 2007 2008 U V Jul 7 2009 W Aug 8 2010 X Sep 9 2011 Y 2012 Z Oct O 2013 A Nov N 2014 B 2015 C Dec D Package Outline Dimensions A BC H K M J D F L SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm Suggested Pad Layout C2 C2 Z G C1 Y X Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. MMDT4124 Document number: DS30164 Rev. 10 - 2 3 of 3 www.diodes.com January 2009 © Diodes Incorporated