MMDT4413

MMDT4413 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 NEW PRODUCT Dim A B BC C1 Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 KXX E2 B2 C D F H J M 0.65 Nominal Mechanical Data · · · · · Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K13 Weight: 0.006 grams (approx.) K H K L M J D F L All Dimensions in mm Note: E1, B1, and C1 = PNP 4403 Section, E2, B2, and C2 = NPN 4401 Section. Type marking indicates orientation. @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value 60 40 6.0 600 200 625 -55 to +150 Unit V V V mA mW K/W °C Maximum Ratings, NPN 4401 Section Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Maximum Ratings, PNP 4403 Section Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value -40 -40 -5.0 -600 200 625 -55 to +150 Unit V V V mA mW K/W °C Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Maximum combined dissipation. DS30121 Rev. 3P-1 1 of 4 MMDT4413 NEW PRODUCT Electrical Characteristics, NPN 4401 Section Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Symbol @ TA = 25°C unless otherwise specified Min 60 40 6.0 ¾ ¾ 20 40 80 100 40 ¾ 0.75 ¾ ¾ ¾ 1.0 0.1 40 1.0 250 Max ¾ ¾ ¾ 100 100 ¾ ¾ ¾ 300 ¾ 0.40 0.75 0.95 1.2 6.5 30 15 8.0 500 30 ¾ Unit V V V nA nA Test Condition IC = 100mA, IE = 0 IC = 1.0mA, IB = 0 IE = 100mA, IC = 0 VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = 1.0V 1.0V 1.0V 1.0V 2.0V DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 Ccb Ceb hie hre hfe hoe fT pF pF kW x 10-4 ¾ mS MHz VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz td tr ts tf ¾ ¾ ¾ ¾ 15 20 225 30 ns ns ns ns VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Notes: 3. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30121 Rev. 3P-1 2 of 4 MMDT4413 NEW PRODUCT Electrical Characteristics, PNP 4403 Section Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Symbol @ TA = 25°C unless otherwise specified Min -40 -40 -5.0 ¾ ¾ 30 60 100 100 20 ¾ -0.75 ¾ ¾ ¾ 1.5 0.1 60 1.0 200 Max ¾ ¾ ¾ -100 -100 ¾ ¾ ¾ 300 ¾ -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 ¾ Unit V V V nA nA Test Condition IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -100mA, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 Ccb Ceb hie hre hfe hoe fT pF pF kW x 10-4 ¾ mS MHz VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz td tr ts tf ¾ ¾ ¾ ¾ 15 20 225 30 ns ns ns ns VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA Notes: 3. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30121 Rev. 3P-1 3 of 4 MMDT4413 30 VCE COLLECTOR-EMITTER VOLTAGE (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IC = 300mA IC = 30mA IC = 1mA IC = 10mA IC = 100mA 20 10 Cibo CAPACITANCE (pF) 5.0 Cobo 1.0 0.1 1.0 10 50 REVERSE VOLTS (V) Fig. 1 (4401) Capacitances (Typical) IB BASE CURRENT (mA) Fig. 2 (4401) Typical Collector Saturation Region VCE COLLECTOR-EMITTER VOLTAGE (V) 30 20 Cibo 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 IC = 1mA IC = 10mA IC = 100mA IC = 30mA IC = 300mA CAPACITANCE (pF) 10 5.0 Cobo 1.0 -0.1 -1.0 -10 -30 0.001 0.01 0.1 1 10 100 REVERSE VOLTS (V) Fig. 3 (4403) Capacitances (Typical) IB BASE CURRENT (mA) Fig. 4 (4403) Typical Collector Saturation Region DS30121 Rev. 3P-1 4 of 4 MMDT4413