MMDT5451-7-F

MMDT5451 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • Complementary Pair One 5551-Type NPN One 5401-Type PNP Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5) A C2 B1 E1 SOT-363 Dim A BC Min 0.10 1.15 2.00 0.30 1.80 — 0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° B C D F M E2 B2 C1 G H K 0.65 Nominal Mechanical Data • • • • • • • • • Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: KNM, See Page 5 Ordering & Date Code Information: See Page 5 Weight: 0.006 grams (approximate) H J K L M α J D F L E1, B1, C1 = PNP5401 Section E2, B2, C2 = NPN5551 Section All Dimensions in mm Maximum Ratings, NPN 5551 Section Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO NPN5551 180 160 6.0 200 200 625 -55 to +150 Unit V V V mA mW °C/W °C (Note 1) (Note 1, 2) (Note 1) IC Pd RθJA Tj, TSTG Maximum Ratings, PNP 5401 Section Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. 2. 3. 4. 5. @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO PNP5401 -160 -150 -5.0 -200 200 625 -55 to +150 Unit V V V mA mW K/W °C (Note 1) (Note 1, 2) (Note 1) IC Pd RθJA Tj, TSTG Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Maximum combined dissipation. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30171 Rev. 9 - 2 1 of 5 www.diodes.com MMDT5451 © Diodes Incorporated Electrical Characteristics, NPN 5551 Section Characteristic OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 6) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure Cobo hfe fT NF hFE @TA = 25°C unless otherwise specified Min 180 160 6.0 ⎯ ⎯ 80 80 30 ⎯ ⎯ ⎯ 50 100 ⎯ Max ⎯ ⎯ ⎯ 50 50 ⎯ 250 ⎯ 0.15 0.20 1.0 Unit V V V nA μA nA Test Condition IC = 100μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100°C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 10V, f = 1.0MHz, IE = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 200μA, RS = 1.0kΩ, f = 1.0kHz Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ⎯ V V VCE(SAT) VBE(SAT) 6.0 250 300 8.0 pF ⎯ MHz dB Electrical Characteristics, PNP 5401 Section Characteristic OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 6) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure Notes: 6. Short duration pulse test used to minimize self-heating effect. @TA = 25°C unless otherwise specified Min -160 -150 -5.0 ⎯ ⎯ 50 60 50 ⎯ ⎯ ⎯ 40 100 ⎯ Max ⎯ ⎯ ⎯ -50 -50 ⎯ 240 ⎯ -0.2 -0.5 -1.0 Unit V V V nA μA nA Test Condition IC = -100μA, IE = 0 IC = -1.0mA, IB = 0 IE = -10μA, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, TA = 100°C VEB = -3.0V, IC = 0 IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -50mA, VCE = -5.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -10V, f = 1.0MHz, IE = 0 VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -200μA, RS = 10Ω, f = 1.0kHz Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(SAT) VBE(SAT) ⎯ V V Cobo hfe fT NF 6.0 200 300 8.0 pF ⎯ MHz dB DS30171 Rev. 9 - 2 2 of 5 www.diodes.com MMDT5451 © Diodes Incorporated 200 0.15 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.14 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 TA = -50°C T A = 25°C TA = 150°C IC IB = 10 PD, POWER DISSIPATION (mW) 150 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs. Ambient Temperature (Total Device) 200 0.04 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current (NPN5551) 1,000 VCE = 5V 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current (NPN5551) IC IB = 10 TA = 150°C T A = 25°C VCE = 5V TA = -50°C hFE, DC CURRENT GAIN TA = 150°C 100 TA = 25°C TA = -50°C 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current (NPN5551) 100 100 1,000 fT, GAIN BANDWIDTH PRODUCT (MHz) 10.0 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 1.0 TA = 150°C 100 10 0.1 TA = -50°C TA = 25°C 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current (NPN5551) 100 0.01 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 6, Collector Emitter Saturation Voltage vs. Collector Current (PNP5401) DS30171 Rev. 9 - 2 3 of 5 www.diodes.com MMDT5451 © Diodes Incorporated 10,000 VBE(ON), BASE EMITTER VOLTAGE (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) Fig. 8, Base Emitter Voltage vs. Collector Current (PNP5401) 100 TA = 150°C T A = 25°C VCE = 5V TA = -50°C 1,000 hFE, DC CURRENT GAIN 100 10 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7, DC Current Gain vs. Collector Current (PNP5401) 1,000 VCE = 10V 1 ft, GAIN BANDWIDTH PRODUCT (MHz) 100 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 9, Gain Bandwidth Product vs. Collector Current (PNP5401) 100 DS30171 Rev. 9 - 2 4 of 5 www.diodes.com MMDT5451 © Diodes Incorporated Ordering Information Device MMDT5451-7-F Notes: 7. (Note 7) Packaging SOT-363 Shipping 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information KNM KNM = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year 1998 Code J Month Code Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 YM 2003 P May 5 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30171 Rev. 9 - 2 5 of 5 www.diodes.com MMDT5451 © Diodes Incorporated