MMST3904_2

MMST3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMST3906) Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Notes 3 and 4) A C SOT-323 Dim A BC Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0° Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8° B C D E M B G H E Mechanical Data • • • • • • • • Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: K2N - See Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.006 grams (approximate) K 0.65 Nominal G H J K L M α J D E L C B E All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RθJA Tj, TSTG Value 60 40 6.0 200 200 625 -55 to +150 Unit V V V mA mW °C/W °C Characteristic Collector Current – Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com./products/lead_free/index.php. 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30082 Rev. 11 - 2 1 of 4 www.diodes.com MMST3904 © Diodes Incorporated Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5) @TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL 60 40 5.0 ⎯ ⎯ ⎯ ⎯ ⎯ 50 50 V V V nA nA IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 IE = 10μA, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V IC = 100μA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA DC Current Gain hFE 40 70 100 60 30 ⎯ 0.65 ⎯ ⎯ ⎯ 1.0 0.5 100 1.0 300 ⎯ ⎯ ⎯ 300 ⎯ ⎯ 0.25 0.30 0.85 0.95 ⎯ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwith Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Notes: 5. Short duration pulse test used to minimize self-heating effect. VCE(SAT) VBE(SAT) V V Cobo Cibo hie hre hfe hoe fT NF 4.0 8.0 10 8.0 400 40 ⎯ 5.0 pF pF kΩ x 10 ⎯ μS MHz dB -4 VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0MHz VCE = 20V, IC = 10mA, f = 100MHz VCC = 5.0V, IC = 100μA, RS = 1.0kΩ, f = 1.0MHz td tr ⎯ ⎯ 35 35 ns ns VCC = 3.0V, IC = 10mA, VBE(OFF) = -0.5V, IB1 = 1.0mA DS30082 Rev. 11 - 2 2 of 4 www.diodes.com MMST3904 © Diodes Incorporated 15 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF) 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 200 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 10 5 0 0.1 1 10 100 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2 Input and Output Capacitance vs. Collector-Base Voltage 1,000 VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE VCE = 1.0V 1 TA = 125°C hFE, DC CURRENT GAIN 100 T A = -25°C TA = +25°C 0.1 10 1 0.1 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 0.01 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE 1 0.1 0.1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current DS30082 Rev. 11 - 2 3 of 4 www.diodes.com MMST3904 © Diodes Incorporated Ordering Information Device MMST3904-7-F Notes: (Notes 4 and 6) Packaging SOT-323 Shipping 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K2N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K2N Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 YM 2003 P May 5 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30082 Rev. 11 - 2 4 of 4 www.diodes.com MMST3904 © Diodes Incorporated