MMST3906
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (MMST3904) Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) "Green" Device (Notes 3 and 4)
B G H K M A C
SOT-323 Dim
BC E
Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0°
Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8°
A B C D E G H J K L M α
Mechanical Data
• • • • • • • • • Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: K5N - See Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.006 grams (approximate)
0.65 Nominal
J
D
E
L
C
B
E
All Dimensions in mm
Maximum Ratings
@TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RθJA Tj, TSTG Value -40 -40 -5.0 -200 200 625 -55 to +150 Unit V V V mA mW o C/W
o
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Notes:
C
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30079 Rev. 8 - 2
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MMST3906
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Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5)
@TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 ⎯ ⎯ 60 80 100 60 30 ⎯ -0.65 ⎯ ⎯ ⎯ 2.0 0.1 100 3.0 300 ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ -50 -50 ⎯ ⎯ 300 ⎯ ⎯ -0.20 -0.30 -0.85 -0.95 4.5 10 12 10 400 60 ⎯ 4.0 35 35 225 75 Unit V V V nA nA Test Condition IC = -10μA, IE = 0 IC = -1.0mA, IB = 0 IE = -10μA, IC = 0 VCE = -30V, VEB(OFF) = -3.0V VCE = -30V, VEB(OFF) = -3.0V IC = -100µA, VCE = -1.0V IC = -1.0mA, VCE = -1.0V IC = -10mA, VCE = -1.0V IC = -50mA, VCE = -1.0V IC = -100mA, VCE = -1.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -5.0V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 VCE = 1.0V, IC = 10mA, f = 1.0kHz VCE = -20V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -100μA, RS = 1.0kΩ, f = 1.0kHz VCC = -3.0V, IC = -10mA, VBE(off) = 0.5V, IB1 = -1.0mA VCC = -3.0V, IC = -10mA, IB1 = IB2 = -1.0mA
DC Current Gain
hFE
⎯
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
Note: 5. Short duration pulse test used to minimize self-heating effect.
VCE(SAT) VBE(SAT) Cobo Cibo hie hre hfe hoe fT NF td tr ts tf
V V pF pF kΩ -4 x 10 ⎯ μS MHz dB ns ns ns ns
DS30079 Rev. 8 - 2
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MMST3906
© Diodes Incorporated
100 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF)
350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50
Cobo f = 1MHz
10
Cibo
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs. Ambient Temperature
1000
VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE
1 0.1
1
10
100
VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage
10
IC IB = 10
hFE, DC CURRENT GAIN
TA = 125°C
1
100
TA = -25°C TA = +25°C
0.1
10
VCE = 1.0V
1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current
0.01 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current
1.0 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE
0.9
0.8
0.7
0.6
IC IB = 10
0.5 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current 100
DS30079 Rev. 8 - 2
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MMST3906
© Diodes Incorporated
Ordering Information
Device MMST3906-7-F
Notes:
(Notes 4 and 6) Packaging SOT-323 Shipping 3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K5N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
K5N
Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P May 5 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30079 Rev. 8 - 2
YM
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MMST3906
© Diodes Incorporated