MMST4401

MMST4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMST4403) Ultra-Small Surface Mount Package C SOT-323 A Dim A B B E C Min 0.30 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.25 TOP VIEW C D E G H J M L Mechanical Data · · · · · B 0.65 Nominal Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K3X Weight: 0.006 grams (approx.) E D G H K J K L M All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMST4401 60 40 6.0 600 200 625 -55 to +150 Unit V V V mA mW K/W °C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30084 Rev. 3P-1 1 of 3 MMST4401 Electrical Characteristics @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min 60 40 6.0 ¾ ¾ 20 40 80 100 40 ¾ 0.75 ¾ ¾ ¾ 1.0 0.1 40 1.0 250 ¾ ¾ ¾ ¾ Max ¾ ¾ ¾ 100 100 ¾ ¾ ¾ 300 ¾ 0.40 0.75 0.95 1.2 6.5 30 15 8.0 500 30 ¾ Unit V V V nA nA Test Condition IC = 100mA, IE = 0 IC = 1.0mA, IB = 0 IE = 100mA, IC = 0 VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V IC = 100µA, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = 1.0V 1.0V 1.0V 1.0V 2.0V NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 Ccb Ceb hie hre hfe hoe fT pF pF kW x 10-4 ¾ mS MHz VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA td tr ts tf 15 20 225 30 ns ns ns ns Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30084 Rev. 3P-1 2 of 3 MMST4401 30 VCE COLLECTOR-EMITTER VOLTAGE (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IC = 300mA IC = 30mA IC = 1mA IC = 10mA IC = 100mA NEW PRODUCT 20 10 Cibo CAPACITANCE (pF) 5.0 Cobo 1.0 0.1 1.0 10 50 REVERSE VOLTS (V) Fig. 1 Capacitances (Typical) IB BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region DS30084 Rev. 3P-1 3 of 3 MMST4401