MMST4403

MMST4403 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT · · · Epitaxial Planar Die Construction Complementary NPN Type Available (MMST4401) Ultra-Small Surface Mount Package C SOT-323 Dim A Min 0.30 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.25 A B B E C TOP VIEW C D E G H J Mechanical Data · · · · · B 0.65 Nominal Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K3T Weight: 0.006 grams (approx.) E D G H K J L M K L M All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMST4403 -40 -40 -5.0 -600 200 625 -55 to +150 Unit V V V mA mW K/W °C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Note: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30083 Rev. 2P-1 1 of 3 MMST4403 Electrical Characteristics @ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 ¾ ¾ 30 60 100 100 20 ¾ -0.75 ¾ ¾ ¾ 1.5 0.1 60 1.0 200 Max ¾ ¾ ¾ -100 -100 ¾ ¾ ¾ 300 ¾ -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 ¾ Unit V V V nA nA Test Condition IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -100mA, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Note: VCE(SAT) VBE(SAT) V V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 Ccb Ceb hie hre hfe hoe fT pF pF kW x 10-4 ¾ mS MHz VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz td tr ts tf ¾ ¾ ¾ ¾ 15 20 225 30 ns ns ns ns VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30083 Rev. 2P-1 2 of 3 MMST4403 30 20 Cibo CAPACITANCE (pF) 10 5.0 Cobo 1.0 -0.1 -1.0 -10 -30 REVERSE VOLTS (V) Fig. 1 Capacitances (Typical) VCE COLLECTOR-EMITTER VOLTAGE (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 1 IC = 1mA IC = 30mA IC = 10mA IC = 100mA IC = 300mA 0.01 0.1 10 100 IB BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region DS30083 Rev. 2P-1 3 of 3 MMST4403