MMST4403
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (MMST4401) Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4)
B G A C
SOT-323 Dim A
BC E
Min 0.25 1.15 2.00 0.30 1.80 1.80 0.0 0.90 0.25 0.10 0°
Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8°
B C D E
M
Mechanical Data
• • • • • • • • • Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: K3T - See Page 4 Ordering & Date Code Information: See Page 4 Weight: 0.006 grams (approximate)
K
0.65 Nominal
H
G H J K L M α
J
C
D
E
L
B
E
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
@TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RθJA Tj, TSTG Value -40 -40 -5.0 -600 200 625 -55 to +150 Unit V V V mA mW K/W °C
Characteristic
Collector Current – Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants..
DS30083 Rev. 7 - 2
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MMST4403
© Diodes Incorporated
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 5)
@TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition
V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL
-40 -40 -5.0 ⎯ ⎯
⎯ ⎯ ⎯ -100 -100 ⎯ ⎯ ⎯ 300 ⎯ -0.40 -0.75 -0.95 -1.30
V V V nA nA
IC = -100μA, IE = 0 IC = -1.0mA, IB = 0 IE = -100μA, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V -100μA, VCE = -1.0V -1.0mA, VCE = -1.0V -10mA, VCE = -1.0V -150mA, VCE = -2.0V -500mA, VCE = -2.0V -150mA, IB = -15mA -500mA, IB = -50mA -150mA, IB = -15mA -500mA, IB = -50mA
B B B B
DC Current Gain
hFE
30 60 100 100 20 ⎯ -0.75 ⎯ ⎯ ⎯ 1.5 0.1 60 1.0 200
⎯
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwith Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect
VCE(SAT) VBE(SAT)
V V
IC = IC = IC = IC = IC = IC = IC = IC = IC =
Cob Ceb hie hre hfe hoe fT
8.5 30 15 8.0 500 100 ⎯
pF pF kΩ x 10 ⎯ μS MHz
-4
VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0
VCE = -10V, IC = -1.0mA, f = 1.0MHz
VCE = -10V, IC = -20mA, f = 100MHz
td tr ts tr
⎯ ⎯ ⎯ ⎯
15 20 225 30
ns ns ns ns
VCE = -30V, IC = -150mA, VBE(OFF) = -2.0V, IB1 = -15mA VCE = -30V, IC = -150mA, IB1 = IB2 = -15mA
1,000 350 PD, POWER DISSIPATION (mW) hFE, DC CURRENT GAIN 300 250 200 150 100 50 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 0 25 1 1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 DC Current Gain vs. Collector Current
100
10
DS30083 Rev. 7 - 2
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MMST4403
© Diodes Incorporated
30
VCE COLLECTOR-EMITTER VOLTAGE (V)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
IC = 1mA I C = 10mA I C = 100mA I = 300mA C IC = 30mA
20 CAPACITANCE (pF)
Cibo
10
5.0
Cobo
1.0 -0.1
-10 REVERSE VOLTS (V) Fig. 3 Typical Capacitance
-1.0
-30
1 0.1 10 100 0.01 IB BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region
0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
IC IB = 10
1,000 VBE(ON), BASE EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
0.4
0.3
TA = 25°C
0.2
TA = 150°C
0.1
T A = 50°C
0
1
10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current
1 10 IC, COLLECTOR CURRENT (mA) Fig. 6 Base-Emitter Voltage vs. Collector Current
100
1,000 fT, GAIN BANDWIDTH PRODUCT (MHz)
100
10
1 1
10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current
DS30083 Rev. 7 - 2
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MMST4403
© Diodes Incorporated
Ordering Information
Device MMST4403-7-F
Notes:
(Note 4 and 6) Packaging SOT-323 Shipping 3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K3T = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
K3T
Date Code Key Year Code Month Code
1998 J Jan 1
1999 K Feb 2
2000 L
2001 M Mar 3
YM
2002 N Apr 4
2003 P May 5
2004 R Jun 6
2005 S
2006 T Jul 7
2007 U Aug 8
2008 V Sep 9
2009 W Oct O
2010 X
2011 Y Nov N
2012 Z Dec D
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30083 Rev. 7 - 2
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MMST4403
© Diodes Incorporated