MMSTA06

MMSTA06

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MMSTA06 - NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
MMSTA06 数据手册
MMSTA05/MMSTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT · · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMSTA55/MMSTA56) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package B E SOT-323 A C TOP VIEW E D G H K J L M B C Dim A B C D E G H J K L M Min 0.30 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.25 0.65 Nominal Mechanical Data · · · · · · Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram MMSTA05 Marking K1H, K1G MMSTA06 Marking K1G Weight: 0.006 grams (approx.) All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMSTA05 60 60 4.0 500 200 625 -55 to +150 MMSTA06 80 80 Unit V V V mA mW K/W °C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Note: @ TA = 25°C unless otherwise specified Symbol MMSTA05 MMSTA06 MMSTA05 MMSTA06 MMSTA05 MMSTA06 MMSTA05 MMSTA06 Min 60 80 60 80 4.0 ¾ ¾ Max Unit Test Condition V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES ¾ ¾ ¾ 100 100 V V V nA nA IC = 100mA, IE = 0 IC = 1.0mA, IB = 0 IE = 100mA, IC = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 100mA, IB = 10mA IC = 100mA, VCE = 1.0V VCE = 2.0V, IC = 10mA, f = 100MHz hFE VCE(SAT) VBE(SAT) 100 ¾ ¾ ¾ 0.25 1.2 ¾ V V fT 100 ¾ MHz 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30168 Rev. B-1 1 of 1 MMSTA05/MMSTA06
MMSTA06
1. 物料型号: - MMSTA05 - MMSTA06

2. 器件简介: - 该器件为NPN小信号表面贴装晶体管,采用外延平面芯片结构,有互补的PNP型号(MMSTA55/MMSTA56)。 - 适用于中等功率放大和开关,超小型表面贴装封装。

3. 引脚分配: - SOT-323塑封封装,引脚可焊性符合MIL-STD-202方法208。 - MMSTA05的标记为K1H、K1G;MMSTA06的标记为K1G。

4. 参数特性: - 集电极-基极电压(VCBO):MMSTA05为60V,MMSTA06为80V。 - 集电极-发射极电压(VCEO):MMSTA05为60V,MMSTA06为80V。 - 发射极-基极电压(VEBO):MMSTA05为4.0V。 - 集电极电流-连续(Ic):500mA。 - 功率耗散(Pd):200mW。 - 热阻,结到环境(RBJA):625K/W。 - 工作和存储温度范围(T,TSTG):-55至+150°C。

5. 功能详解: - 关断特性包括集电极-基极击穿电压、集电极-发射极击穿电压、发射极-基极击穿电压、集电极截止电流等。 - 开启特性包括直流电流增益、集电极-发射极饱和电压、基极-发射极饱和电压等。 - 小信号特性包括电流增益-带宽积。

6. 应用信息: - 适用于中等功率放大和开关。

7. 封装信息: - 封装类型为SOT-323,塑封。
MMSTA06 价格&库存

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MMSTA06-7-F
  •  国内价格
  • 5+0.68245
  • 50+0.50442

库存:100