0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MURB1610CT

MURB1610CT

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    MURB1610CT - 16A SURFACE MOUNT SUPER-FAST RECTIFIER - Diodes Incorporated

  • 数据手册
  • 价格&库存
MURB1610CT 数据手册
MURB1610CT / MURB1620CT 16A SURFACE MOUNT SUPER-FAST RECTIFIER Features · · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Recovery Times for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Reverse Leakage Current Plastic Material: UL Flammability Classification Rating 94V-0 E A 4 G H B D2PAK Dim A B C D E Min 9.65 14.60 0.51 2.29 4.37 1.14 1.14 8.25 0.30 2.03 2.29 Max 10.69 15.88 1.14 2.79 4.83 1.40 1.40 9.25 0.64 2.92 2.79 J 1 2 3 Mechanical Data · · · · · Case: Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 1.7 grams (approx.) Mounting Position: Any M D C PIN 1 PIN 3 G K L PIN 2 & 4 H J K L M All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 125°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current at Rated DC Blocking Voltage Maximum Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Typical Thermal Resistance Junction to Case Operating and Storage Temperature Range @ IF = 8.0A @TA = 25°C @ TA = 150°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM trr Cj RqJC Tj, TSTG @ TA = 25°C unless otherwise specified MURB1610CT 100 70 16 100 0.975 5.0 250 25 85 1.5 -65 to +150 MURB1620CT 200 140 Unit V V A A V mA ns pF °C/W °C Notes: 1. Unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink. 2. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. 3. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC. DS14005 Rev. A1-2 1 of 2 MURB1610CT/MURB1620CT 16 IF, INSTANTANEOUS FORWARD CURRENT (A) 20 100 I(AV), AVERAGE FORWARD CURRENT (A) 10 12 8 1.0 4 Resistive or inductive load 0 0.1 0.2 0.6 1.0 Tj = 25°C Pulse width = 300µs 2% duty cycle 100 125 150 175 1.4 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 150 125 100 75 Cj, CAPACITANCE (pF) 400 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics per Element IFSM, PEAK FORWARD SURGE CURRENT (A) 8.3ms single half-sine-wave JEDEC method Tj = 25°C 100 50 25 0 10 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance per Element IR, INSTANTANEOUS REVERSE CURRENT (mA) 100 10 TC = 100°C 1.0 TC = 75°C 0.1 TC = 25°C 0.01 0 40 80 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS14005 Rev. A1-2 2 of 2 MURB1610CT/MURB1620CT
MURB1610CT 价格&库存

很抱歉,暂时无法提供与“MURB1610CT”相匹配的价格&库存,您可以联系我们找货

免费人工找货