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S1K

S1K

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    S1K - 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER - Diodes Incorporated

  • 详情介绍
  • 数据手册
  • 价格&库存
S1K 数据手册
S1A/B - S1M/B 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features · · · · · · · · · · · · · Glass Passivated Die Construction Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak Ideally Suited for Automated Assembly A SMA Dim A B C D E G H Min 2.29 4.00 1.27 0.15 4.80 0.10 0.76 2.01 Max 2.92 4.60 1.63 0.31 5.59 0.20 1.52 2.62 SMB Min 3.30 4.06 1.96 0.15 5.00 0.10 0.76 2.00 Max 3.94 4.57 2.21 0.31 5.59 0.20 1.52 2.62 B Mechanical Data Case: Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band or Cathode Notch SMA Weight: 0.064 grams (approx.) SMB Weight: 0.093 grams (approx.) Marking: Type Number, See Page 2 Ordering Information: See Page 2 C D J H G E J All Dimensions in mm A, B, D, G, J, K, M Suffix Designates SMA Package AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package TA = 25°C unless otherwise specified Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TT = 100°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Leakage Current at Rated DC Blocking Voltage Typical Total Capacitance Operating and Storage Temperature Range @ IF = 1.0A @ TA = 25°C @ TA = 125°C (Note 1) Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM CT RqJT Tj, TSTG S1 A/AB 50 35 S1 B/BB 100 70 S1 D/DB 200 140 S1 G/GB 400 280 1.0 30 1.1 5.0 100 10 30 -65 to +150 S1 J/JB 600 420 S1 K/KB 800 560 S1 M/MB 1000 700 Unit V V A A V mA pF °C/W °C Typical Thermal Resistance, Junction to Terminal (Note 2) Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Thermal Resistance Junction to Terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink. DS16003 Rev. 8 - 2 1 of 2 S1A/B - S1M/B Ordering Information Device* S1x-7 S1xB-7 (Note 3) Packaging SMA SMB Shipping 5000/Tape & Reel 3000/Tape & Reel Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. * x = Device type, e.g. S1A-7 (SMA package); S1AB-7 (SMB package). Marking Information YWW XXX(X) XXX = Product type marking code, ex: S1A (SMA package) XXXX = Product type marking code, ex: S1AB (SMB package) = Manufacturers’ code marking YWW = Date code marking Y = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52 0.8 IF, INSTANTANEOUS FORWARD CURRENT (A) 1.0 IO, AVERAGE OUTPUT CURRENT (A) 10 1.0 0.6 0.4 0.1 0.2 Resistive or inductive load 0 40 Tj = 25° C PULSE WIDTH = 300m s 2% DUTY CYCLE 0.01 0 0.4 0.8 1.2 1.6 60 80 100 120 140 160 180 TT, TERMINAL TEMPERATURE (° C) Fig. 1 Forward Current Derating Curve VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 30 IFSM, PEAK FORWARD SURGE CURRENT (A) 8.3ms Single half sine-wave JEDEC Method 1000 25 100 Tj = 125° C 20 10 15 1.0 Tj = 25° C 10 0.1 5 1 10 NUMBER OF CYCLES @ 60Hz Fig. 3 Typical Forward Characteristics 100 0.01 0 40 80 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics DS16003 Rev. 8 - 2 2 of 2 S1A/B - S1M/B
S1K
1. 物料型号: - 型号包括S1A/B、S1M/B等,由DIODES公司生产。

2. 器件简介: - 1.0A表面贴装玻璃钝化整流器,具有玻璃钝化芯片结构、低正向电压降和高电流能力、承受30A峰值的浪涌过载能力,适合自动化组装。

3. 引脚分配: - 极性标识为阴极带或阴极凹口,SMA和SMB封装的引脚均符合MIL-STD-202标准。

4. 参数特性: - 包括峰值重复反向电压、工作峰值反向电压、直流阻断电压、有效值反向电压、平均整流输出电流、非重复峰值正向浪涌电流、正向电压、额定直流阻断电压下的峰值反向漏电流、典型总电容和典型热阻等参数。

5. 功能详解: - 该器件为整流器,适用于单相、半波、60Hz的电阻性或感性负载,对于容性负载,需降低20%的电流。

6. 应用信息: - 适用于需要高电流能力和低正向电压降的应用场合,如电源整流等。

7. 封装信息: - 提供SMA和SMB两种封装,具体尺寸和重量在文档中有详细描述,封装材料为UL可燃性等级94V-0的模塑料。

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