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SBD835L

SBD835L

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    SBD835L - 8A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated

  • 数据手册
  • 价格&库存
SBD835L 数据手册
SBD835L 8A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features · · · · · · Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Very Low Forward Voltage Drop Surge Overload Rating to 150A Peak Plastic Material: UL Flammability Classification Rating 94V-0 DPAK ADVANCE INFORMATION A P 4 E G H B Dim A B C D E G H Min 6.3 ¾ 0.3 2.1 0.4 1.2 5.3 1.3 1.0 5.1 Max 6.7 10 0.8 2.5 0.6 1.6 5.7 1.8 ¾ 5.5 J 2.3 Nominal 1 2 3 Mechanical Data · · · · · Case: DPAK Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: Type Number Weight: 0.4 grams (approx.) Note: M D C PIN 1 PIN 3 J K L PIN 4 K L M P 0.5 Nominal All Dimensions in mm Pins 1 & 3 must be electrically connected at the printed circuit board. @ TA = 25°C unless otherwise specified Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 88°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) Forward Voltage (Note 2) Voltage Rate of Change Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 3) Typical Thermal Resistance Junction to Case (Note 1) Typical Thermal Resistance Junction to Ambient Operating Temperature Range Storage Temperature Range Notes: @ TC = 25°C @ TC = 100°C @ IF = 8A, Tj = 25°C @ IF = 8A, Tj = 125°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM dv/dt IRM CJ RqJC RqJA Tj TSTG SBD835L 35 25 8 150 0.51 0.41 10,000 1.4 35 300 6 80 -65 to +125 -65 to +150 Unit V V A A V V/ms mA pF °C/W °C/W °C °C 1. Thermal resistance: junction to case, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink. 2. 300ms pulse width, 2% duty cycle. 3. f = 1 MHz, VR = 5VDC. DS30202 Rev. E-1 1 of 2 SBD835L 10 100 ADVANCE INFORMATION I(AV), AVERAGE FORWARD CURRENT (A) IF, INSTANTANEOUS FWD CURRENT (A) 8 10 6 1 TJ = 125ºC 4 0.1 TJ = 25ºC 2 TJ = 125ºC 0 0 100 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 150 0.01 200 0 0.1 0.2 0.3 0.4 0.5 0.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Fwd Characteristics per Element IR, INSTANTANEOUS REVERSE CURRENT (mA) IFSM, PEAK FORWARD SURGE CURRENT (A) 10.0 8.3ms single Half-Sine-Wave (JEDEC Method) 120 1.0 TJ = 100ºC 90 0.1 60 30 0.01 TJ = 25ºC 0 1 10 Number of Cycles at 60Hz Fig. 3 Max Non-Repetitive Surge Current 100 0.001 0 5 10 15 20 25 30 35 40 VR, RATED PEAK REVERSE VOLTAGE (V) Fig. 4 Typical Reverse Characteristics DS30202 Rev. E-1 2 of 2 SBD835L
SBD835L 价格&库存

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