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SBG3060CT

SBG3060CT

  • 厂商:

    DIODES

  • 封装:

  • 描述:

    SBG3060CT - 30A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER - Diodes Incorporated

  • 数据手册
  • 价格&库存
SBG3060CT 数据手册
SBG3030CT - SBG3060CT 30A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 250A Peak For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 E A 4 D2PAK G H J Dim A B C D E G H Min 9.65 14.60 0.51 2.29 4.37 1.14 1.14 8.25 0.30 2.03 2.29 Max 10.69 15.88 1.14 2.79 4.83 1.40 1.40 9.25 0.64 2.92 2.79 B 1 2 3 M Mechanical Data · · · · · · Case: D PAK Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: Type Number Weight: 1.7 grams (approx.) Mounting Position: Any 2 D C PIN 1 PIN 3 K L PIN 2 & 4 J K L M All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 100°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage, per Element Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Case (Note 1) Operating and Storage Temperature Range Notes: @ IF = 15A, TC = 25°C @ TC = 25°C @ TC = 100°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM Cj RqJC Tj, TSTG @ TA = 25°C unless otherwise specified SBG 3030CT 30 21 SBG 3040CT 40 28 SBG 3045CT 45 32 30 250 SBG 3050CT 50 35 SBG 3060CT 60 42 Unit V V A A 0.55 1.0 75 420 1.5 -65 to +150 0.70 V mA pF K/W °C 1. Thermal resistance: junction to case mounted on heat sink. 2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC. DS30025 Rev. C-2 1 of 2 SBG3030CT - SBG3060CT IF, INSTANTANEOUS FORWARD CURRENT (A) 30 100 SBG3030CT-SBG3045CT I(AV), AVERAGE RECTIFIED CURRENT (A) 24 10 SBG3050CT-SBG3060CT 18 12 1.0 6 0 0 50 100 150 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Derating Curve 0.1 0.2 0.4 0.6 Tj = 25°C IF Pulse Width = 300µs 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 1000 300 IFSM, PEAK FORWARD CURRENT (A) 8.3 ms single half-sine-wave JEDEC method 200 150 Cj, JUNCTION CAPACITANCE (pF) 250 100 100 50 Tj = 25°C f = 1.0MHz 0 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Maximum Non-Repetitive Surge Current 10 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance DS30025 Rev. C-2 2 of 2 SBG3030CT - SBG3060CT
SBG3060CT 价格&库存

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