SBL1035CT

SPICE MODEL: SBL1030CT SBL1035CT SBL1040CT SBL1045CT SBL1050CT SBL1060CT SBL1030CT - SBL1060CT 10A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Lead Free Finish, RoHS Compliant (Note 3) K C D A 1 2 3 TO-220AB L B M Dim A B C D E G Min 14.48 10.00 2.54 5.90 2.80 12.70 2.40 0.69 3.54 4.07 1.15 0.30 2.04 Max 15.75 10.40 3.43 6.40 3.93 14.27 2.70 0.93 3.78 4.82 1.39 0.50 2.79 Mechanical Data · · · · · · · Case: TO-220AB Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Polarity: As Marked on Body Terminals: Finish – Bright Tin. Solderable per MIL-STD-202, Method 208 Marking: Type Number Weight: 2.24 grams (approx.) J E G N H J K L M N P HH Pin 1 + Pin 2 Pin 3 + + Case P All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TC = 95°C (Note 1) @ TA = 25°C unless otherwise specified SBL Symbol 1030CT VRRM VRWM VR VR(RMS) IO IFSM VFM IRM Cj RqJC Tj, TSTG 30 21 SBL 1035CT 35 24.5 SBL 1040CT 40 28 SBL 1045CT 45 31.5 SBL 1050CT 50 35 SBL 1060CT 60 42 Unit V V A A 10 175 0.55 0.5 50 450 5.5 -65 to +150 0.70 Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance Typical Thermal Resistance Junction to Case Operating and Storage Temperature Range Notes: @ IF = 5.0A, TC = 25°C @ TC = 25°C @ TC = 125°C (Note 2) (Note 1) V mA pF °C/W °C 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS23048 Rev. 4 - 2 1 of 3 www.diodes.com SBL1030CT - SBL1060CT ã Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) 20 100 I(AV), AVERAGE FORWARD CURRENT (A) 16 SBL1030CT - SBL10450CT 10 12 SBL1050CT - SBL1060CT 8 1.0 4 0 0 50 100 150 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 300 0.1 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics per Element 4000 8.3ms single half-sine-wave JEDEC method IFSM, PEAK FORWARD SURGE CURRENT (A) Tj = 25°C 250 Cj, CAPACITANCE (pF) 200 1000 150 100 50 100 0 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current IR, INSTANTANEOUS REVERSE CURRENT (mA) 10 TC = 125°C 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance per Element 1.0 TC = 75°C 0.1 TC = 25°C 0.01 0.001 0 40 80 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics DS23048 Rev. 4 - 2 2 of 3 www.diodes.com SBL1030CT - SBL1060CT Ordering Information Device SBL10xxCT* (Note 4) Packaging TO-220AB Shipping 50/Tube * xx = Device type, e.g. SBL1045CT Notes: 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf. DS23048 Rev. 4 - 2 3 of 3 www.diodes.com SBL1030CT - SBL1060CT